5 research outputs found

    Friction force on slow charges moving over supported graphene

    Full text link
    We provide a theoretical model that describes the dielectric coupling of a 2D layer of graphene, represented by a polarization function in the Random Phase Approximation, and a semi-infinite 3D substrate, represented by a surface response function in a non-local formulation. We concentrate on the role of the dynamic response of the substrate for low-frequency excitations of the combined graphene-substrate system, which give rise to the stopping force on slowly moving charges above graphene. A comparison of the dielectric loss function with experimental HREELS data for graphene on a SiC substrate is used to estimate the damping rate in graphene and to reveal the importance of phonon excitations in an insulating substrate. A signature of the hybridization between graphene's pi plasmon and the substrate's phonon is found in the stopping force. A friction coefficient that is calculated for slow charges moving above graphene on a metallic substrate shows an interplay between the low-energy single-particle excitations in both systems.Comment: 13 pages, 5 figures, submitted to Nanotechnology for a special issue related to the NGC 2009 conference (http://asdn.net/ngc2009/index.shtml

    Graphene Transport at High Carrier Densities using a Polymer Electrolyte Gate

    Full text link
    We report the study of graphene devices in Hall-bar geometry, gated with a polymer electrolyte. High densities of 6 ×1013/cm2\times 10^{13}/cm^{2} are consistently reached, significantly higher than with conventional back-gating. The mobility follows an inverse dependence on density, which can be correlated to a dominant scattering from weak scatterers. Furthermore, our measurements show a Bloch-Gr\"uneisen regime until 100 K (at 6.2 ×1013/cm2\times10^{13}/cm^{2}), consistent with an increase of the density. Ubiquitous in our experiments is a small upturn in resistivity around 3 ×1013/cm2\times10^{13}/cm^{2}, whose origin is discussed. We identify two potential causes for the upturn: the renormalization of Fermi velocity and an electrochemically-enhanced scattering rate.Comment: 13 pages, 4 figures, Published Versio

    Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

    No full text
    corecore