Chemical Beam Epitaxy of Compound Semiconductors

Contains an introduction and report on one research project.Joint Services Electronics Program (Contract DAAL03-86-K-0002)Joint Services Electronics Program (Contract DAALO3-89-C-0001)U.S. Navy - Office of Naval Research (Contract N00014-88-K-0564

InSb/CdTe Heterostructures Grown by Molecular Beam Epitaxy

Given the potential for quantum effect device application, the growth, by molecular beam epitaxy, and characterization of InSb-CdTe heterostructures is described. Two procedures for growth of these heterostructures are employed. For the growth of InSb/CdTe double heterostructures, InSb and CdTe layers are grown in separate MBE growth chambers connected via an ultrahigh vacuum transfer module. Here, antimony originating from a compound InSb source oven is used for growth of InSb layers. For the growth of CdTe/InSb multiple quantum well structures, InSb and CdTe layers are grown in a single MBE growth chamber, where antimony is derived from an antimony cracking furnace. To study the optical nature of heteroepitaxially grown InSb, infrared photoluminescence from InSb based double heterostructures has been examined. Despite the transferral of grown layers between III-V and II-VI chambers, luminescence gathered from thick” InSb active layers has shown the existence of recombination features which are similar to bulk InSb. For multilayer structures, grown in a single chamber with the use of an antimony cracker, emphasis has been placed on structural examination by transmission electron microscopy and x-ray diffraction techniques. Examination of multilayer structures by transmission electron microscopy suggests tha t the cracker may be useful for the growth of InSb at low substrate temperatures and low growth rates. Using the cracker, CdTe/InSb superlattice structures have been grown showing multiple satellite peaks in the x-ray diffraction spectrum

Molecular Beam Epitaxy of ZnSe on GaAs Epilayers for Use in MIS Devices

The use of ZnSe on GaAs epilayers (epi) as a pseudo-insulator in field effect device applications is demonstrated. The passivating ZnSe layers are grown on GaAs(epi) by interrupted growth molecular beam epitaxy (MBE) using two separate MBE machines. A thin layer of amorphous arsenic protects the GaAs(epi) during transfer between the MBE systems. When nucleated on the GaAs(epi), the ZnSe grows layer-by-layer as revealed by the reflection high energy electron diffraction pattern generated in the II-VI MBE growth chamber. A study of intensity oscillations in the electron diffraction pattern is further used to understand the initial growth stages of ZnSe on GaAs(epi). The material properties of the ZnSe/GaAs(epi) heterostructure are briefly examined. Even though ZnSe and GaAs have a 0.25% lattice mismatch, transmission electron micrographs show that very thin films (1OOOA) of ZnSe form a coherent and dislocation free interface with the GaAs(epi). In thicker ZnSe films, strain relieving misfit dislocations are observed. Photoluminescence measurements reveal information about the effect of the lattice mismatch on the energy band structure of the ZnSe. For the 1OOOA film, the excitonic features are shifted upwards in energy, and the normally degenerate light and heavy hole valence bands split into two bands. As the 1OOOA of ZnSe is an appropriate thickness for an insulator in a field-effect device, the ZnSe/ GaAs(epi) heterostructure is then used in metal-insulator-semiconductor (MIS) capacitors and transistors. Most prominent, the fabrication of the first depletion-mode field-effect transistors based on the ZnSe/n-GaAs heterointerface are described. The transistors display near ideal characteristics with complete current saturation and cutoff; the channel modulation indicates th a t the Fermi level is not pinned a t the ZnSe/n-GaAs interface. With the success of the depletion-mode transistors, the use of ZnSe and GaAs(epi) in future MIS devices appears promisin

Computability, inference and modeling in probabilistic programming

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011.Cataloged from PDF version of thesis.Includes bibliographical references (p. 135-144).We investigate the class of computable probability distributions and explore the fundamental limitations of using this class to describe and compute conditional distributions. In addition to proving the existence of noncomputable conditional distributions, and thus ruling out the possibility of generic probabilistic inference algorithms (even inefficient ones), we highlight some positive results showing that posterior inference is possible in the presence of additional structure like exchangeability and noise, both of which are common in Bayesian hierarchical modeling. This theoretical work bears on the development of probabilistic programming languages (which enable the specification of complex probabilistic models) and their implementations (which can be used to perform Bayesian reasoning). The probabilistic programming approach is particularly well suited for defining infinite-dimensional, recursively-defined stochastic processes of the sort used in nonparametric Bayesian statistics. We present a new construction of the Mondrian process as a partition-valued Markov process in continuous time, which can be viewed as placing a distribution on an infinite kd-tree data structure.by Daniel M. Roy.Ph.D

Chemical Beam Epitaxy of Compound Semiconductors

Contains reports on three research projects.3M Company Faculty Development GrantAT&T Research Foundation Special Purpose GrantJoint Services Electronics Program Contract DAAL03-89-C-0001National Science Foundation Grant ECS 88-46919National Science Foundation Grant ECS 89-05909Purdue University Subcontract No. 530-0716-07U.S. Navy - Office of Naval Research Contract N00014-88-K-056

Chemical Beam Epitaxy of Compound Semiconductors

Contains reports on three research projects and a list of publications.3M Company Faculty Development GrantAT&T Research Foundation Special Purpose GrantDefense Advanced Research Projects Agency Subcontract 216-25013Defense Advanced Research Projects Agency Subcontract 542383Joint Services Electronics Program Contract DAAL03-89-C-0001National Science Foundation Grant ECS 88-46919National Science Foundation Grant ECS 89-05909U.S. Navy - Office of Naval Research Contract N00014-88-K-0564Charles Stark Draper Laboratories Contract DL-H-418484Defense Advanced Research Projects Agency Subcontract 530-0716-0

Chemical Beam Epitaxy of Compound Semiconductors

Contains reports on three research projects and a list of publications.3M Company Faculty Development GrantAT&T Research Foundation Special Purpose GrantCharles S. Draper Laboratories Contract DL-H-418484Defense Advanced Research Projects Agency Subcontract 216-25013Defense Advanced Research Projects Agency Subcontract 542383Joint Services Electronics Program Contract DAAL03-89-C-0001Joint Services Electronics Program Contract DAAL03-92-C-0001National Science Foundation Grant ECS 88-46919National Science Foundation Grant ECS 89-05909Defense Advanced Research Projects Agency Subcontract 5300716-07U.S. Navy - Office of Naval Research Contract N00014-88-K-0564Defense Advanced Research Projects Agency Subcontract 530-0716-07National Science Foundation Subcontract DMR 90-0789

Semiconductor Lasers: Physics and Applications

Contains an introduction and reports on eight research projects.MIT Lincoln Laboratory Contract BX-6558MIT Lincoln LaboratoryU.S. Navy - Office of Naval Research/MUR

Chemical Beam Epitaxy of Compound Semiconductors

Contains an introduction, reports on three research projects and a list of publications.3M Company Faculty Development GrantDefense Advanced Research Projects Agency Subcontract 216-25013Defense Advanced Research Projects Agency Subcontract 542383Joint Services Electronics Program Contract DAAL03-92-C-0001National Science Foundation Grant ECS 88-46919National Science Foundation Grant ECS 89-05909National Science Foundation Grant DMR 92-0295

Gas Source Molecular Beam Epitaxy of Compound Semiconductors

Contains an introduction and reports on six research projects.Advanced Research Projects Agency Subcontract 284-25041Joint Services Electronics Program Contract DAAL03-92-C-0001National Center for Integrated Photonic Technology Contract 542-381National Science Foundation Grant DMR 92-02957National Science Foundation Contract DMR 92-02957National Science Foundation Grant DMR 90-2293