266 research outputs found
Spin-filter tunnel junction with matched Fermi surfaces
Efficient injection of spin-polarized current into a semiconductor is a basic
prerequisite for building semiconductor-based spintronic devices. Here, we use
inelastic electron tunneling spectroscopy to show that the efficiency of
spin-filter-type spin injectors is limited by spin scattering of the tunneling
electrons. By matching the Fermi-surface shapes of the current injection source
and target electrode material, spin injection efficiency can be significantly
increased in epitaxial ferromagnetic insulator tunnel junctions. Our results
demonstrate that not only structural but also Fermi-surface matching is
important to suppress scattering processes in spintronic devices.Comment: 5 pages, 4 figure
Magnetic oxide semiconductors
Magnetic oxide semiconductors, oxide semiconductors doped with transition
metal elements, are one of the candidates for a high Curie temperature
ferromagnetic semiconductor that is important to realize semiconductor
spintronics at room temperature. We review in this paper recent progress of
researches on various magnetic oxide semiconductors. The magnetization,
magneto-optical effect, and magneto-transport such as anomalous Hall effect are
examined from viewpoint of feasibility to evaluate the ferromagnetism. The
ferromagnetism of Co-doped TiO2 and transition metal-doped ZnO is discussed.Comment: 26 pages, 5 tables, 6 figure
Hole-doping-induced changes in the electronic structure of LaSrFeO : soft x-ray photoemission and absorption study of epitaxial thin films
We have studied the electronic structure of epitaxially grown thin films of
LaSrFeO by {\it in-situ} photoemission spectroscopy (PES) and
x-ray absorption spectroscopy (XAS) measurements. The Fe 2 and valence-band
PES spectra and the O XAS spectra of LaFeO have been successfully
reproduced by configuration-interaction cluster-model calculation and, except
for the satellite structure, by band-structure calculation.From the shift of
the binding energies of core levels, the chemical potential was found to be
shifted downward as was increased. Among the three peaks in the
valence-band spectra of LaSrFeO, the peak nearest to the Fermi
level (), due to the `` band'', was found to move toward and
became weaker as was increased, whereas the intensity of the peak just
above in the O XAS spectra increased with . The gap or pseudogap
at was seen for all values of . These results indicate that changes in
the spectral line shape around are dominated by spectral weight transfer
from below to above across the gap and are therefore highly
non-rigid-band-like.Comment: 8 pages, 7 figure
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