266 research outputs found

    Spin-filter tunnel junction with matched Fermi surfaces

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    Efficient injection of spin-polarized current into a semiconductor is a basic prerequisite for building semiconductor-based spintronic devices. Here, we use inelastic electron tunneling spectroscopy to show that the efficiency of spin-filter-type spin injectors is limited by spin scattering of the tunneling electrons. By matching the Fermi-surface shapes of the current injection source and target electrode material, spin injection efficiency can be significantly increased in epitaxial ferromagnetic insulator tunnel junctions. Our results demonstrate that not only structural but also Fermi-surface matching is important to suppress scattering processes in spintronic devices.Comment: 5 pages, 4 figure

    Magnetic oxide semiconductors

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    Magnetic oxide semiconductors, oxide semiconductors doped with transition metal elements, are one of the candidates for a high Curie temperature ferromagnetic semiconductor that is important to realize semiconductor spintronics at room temperature. We review in this paper recent progress of researches on various magnetic oxide semiconductors. The magnetization, magneto-optical effect, and magneto-transport such as anomalous Hall effect are examined from viewpoint of feasibility to evaluate the ferromagnetism. The ferromagnetism of Co-doped TiO2 and transition metal-doped ZnO is discussed.Comment: 26 pages, 5 tables, 6 figure

    Hole-doping-induced changes in the electronic structure of La1−x_{1-x}Srx_xFeO3_3 : soft x-ray photoemission and absorption study of epitaxial thin films

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    We have studied the electronic structure of epitaxially grown thin films of La1−x_{1-x}Srx_xFeO3_3 by {\it in-situ} photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS) measurements. The Fe 2pp and valence-band PES spectra and the O 1s1s XAS spectra of LaFeO3_3 have been successfully reproduced by configuration-interaction cluster-model calculation and, except for the satellite structure, by band-structure calculation.From the shift of the binding energies of core levels, the chemical potential was found to be shifted downward as xx was increased. Among the three peaks in the valence-band spectra of La1−x_{1-x}Srx_xFeO3_3, the peak nearest to the Fermi level (EFE_F), due to the ``ege_{g} band'', was found to move toward EFE_F and became weaker as xx was increased, whereas the intensity of the peak just above EFE_F in the O 1s1s XAS spectra increased with xx. The gap or pseudogap at EFE_F was seen for all values of xx. These results indicate that changes in the spectral line shape around EFE_F are dominated by spectral weight transfer from below to above EFE_F across the gap and are therefore highly non-rigid-band-like.Comment: 8 pages, 7 figure
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