Early Treatment with Methylprednisolone Pulse Therapy Combined with Tonsillectomy for Heavy Proteinuric Henoch-Schönlein Purpura Nephritis in Children

Background: There is no clear consensus as to which patients with Henoch-Schönlein purpura nephritis (HSPN) at risk of a poor outcome should be treated and what therapeutic regimen should be used. Methods: Nine children with heavy proteinuric HSPN received prompt initiation of methylprednisolone pulse therapy (MPT) combined with tonsillectomy in a prospective study. Results: At presentation, the mean values for the patients’ urine protein excretion (early-morning urinary protein/creatinine ratio), serum IgA, activity index (AI), and chronicity index (CI) were 5.0 ± 5.6 g/g Cr, 135.6 ± 56.5 mg/dl, 4.0 ± 0.7, and 1.7 ± 1.3, respectively. At the second biopsy, conducted approximately 24 months after initiation of therapy, the patients’ serum albumin had significantly increased (4.4 ± 0.2, p Conclusions: Early treatment with MPT combined with tonsillectomy is effective in ameliorating the histopathological progression and improving the clinical course of children with heavy proteinuric HSPN

IR Absorption Nnalysis of Oxidation Behaviors of Nano-composite Phases with β-FeSi2 Nanocrystals and Si

We have investigated oxidation behaviors of nano-composite phase with β-FeSi2 nanocrystals (β-NCs) and Si on Si substrates. IR absorption measurements revealed that only oxidation of Si into SiO2 proceeded in the nano-composite phase. This fact is very important for realization of a novel composite phase with β-NCs and SiO2, which may contribute to enhancement of light emission and to prevent a large thermal quenching of light emission observed in the composite phase with β-NCs and Si.International Conference and Summer School on Advanced Silicide Technology 2014, July 19–21, 2014, Tokyo, Japa

Enhancement of Photoluminescence from Cu-doped β-FeSi2/Si Heterostructures

We have investigated photoluminescence (PL) behaviors of the Cu-doped β-FeSi2 thin film/Si heterostructure. Pronounced enhancement of an intrinsic A band and an impurity-related C band emissions has been observed in all the Cu-doped samples. The photo-carrier injection (PCI)-PL measurements have revealed that the PL enhancement is attributed to dynamic process of migration of holes where a repeated trap process of holes can be controlled by Cu-doping.International Conference and Summer School on Advanced Silicide Technology 2014, July 19–21, 2014, Tokyo, Japa

Photoluminescence Property of Nano-composite Phases of β-FeSi2 Nanocrystals Embedded in SiO2

We have investigated photoluminescence (PL) behaviors of nano-composite phase of β-NCs embedded in SiO2 (β-NCs/SiO2). The inhomogeneous spectra consisting of the A, B, and C emission bands were observed. PL enhancement also was confirmed in comparison with β-NCs/Si. Under high pumping rate, we observed PL spectra near room temperatures (~270 K). This fact means that oxidation of the nano-composite phase can contribute to reduction of thermal quenching, which may come from increase of band offsets around β-NCs.International Conference and Summer School on Advanced Silicide Technology 2014, July 19–21, 2014, Tokyo, Japa

Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing

Color centers in solids can serve as single photon emitters (SPEs) those are important in many quantum applications. Silicon carbide (SiC) is a promising host for color centers because of its well-established crystal growth and device technologies. Although color centers with extremely high brightness were found at the silicon dioxide (SiO2)/SiC interface, controlling their density and optical properties remains a challenge. In this study, we demonstrate control over the color centers at the SiO2/SiC interface by designing the oxidation and annealing conditions. We report that post-oxidation CO2 annealing has the ability to reduce the color centers at the interface and form well-isolated SPEs with bright emission. We also discuss the correlation between the color centers and electrically active defects.Takato Nakanuma, Kosuke Tahara, Katsuhiro Kutsuki, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi; Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing. Appl. Phys. Lett. 4 September 2023; 123 (10): 102102. https://doi.org/10.1063/5.016674