Synchronization in unidirectional ring network of chaotic systems with delay-coupling

In this paper, we consider the synchronization problem in unidirectional ring networks of chaotic systems with time-delay coupling. Firstly, we introduce the notion of strict semi-dissipativity and show by using the small-gain theorem that the trajectories of coupled systems satisfying the strict semi-dissipativity are bounded. Then we derive a sufficient condition for synchronization of the systems coupled in a unidirectional way by using a stability criterion for delay systems

Synchronization of Coupled Chaotic Systems with Time-delay

In this paper we consider the synchonization problem for four identical chaotic systems unidirectionally or bidirectionally coupled using state/output feedback with time-delays. Firstly, we show using the small-gain theorem that the trajectories of diffusively coupled strictly semi-dissipative systems converge to a bounded region. Then, for symmetric networks of identical systems, we show that the synchronization problem can be reduced to the stability problem of retarded systems

Synchronization of Coupled Chaotic Systems with Time-delay

In this paper we consider the synchonization problem for four identical chaotic systems unidirectionally or bidirectionally coupled using state/output feedback with time-delays. Firstly, we show using the small-gain theorem that the trajectories of diffusively coupled strictly semi-dissipative systems converge to a bounded region. Then, for symmetric networks of identical systems, we show that the synchronization problem can be reduced to the stability problem of retarded systems

Synchronization of Four Identical Nonlinear Systems with Time-delay

This paper considers the synchronization problem for four identical nonlinear systems coupled with time-delay. We have already studied the synchronization problem for bidirectional two coupled systems with delays and derived sufficient conditions to synchronize the systems. In this paper, these approaches are extended for four identical chaotic systems unidirectionally or bidirectionally coupled using state or output feedback with time-delays. Firstly, we show, using the small-gain theorem, that trajectories of coupled strictly semi-passive systems converge to a bounded region. Then we derive sufficient conditions for synchronization of coupled systems. The derived conditions are based on the delay-dependent Lyapunov-Krasovskii approach, and the criteria are obtained in the form of linear matrix inequalities (LMIs). The effectiveness of the derived conditions is illustrated by numerical examples

On the use of shape memory alloy thin films to tune the dynamic response of micro-cantilevers

We investigate the effect of martensitic phase transformations on the dynamic response of commercial AFM silicon cantilevers coated with shape memory alloy (SMA) thin films. We propose a simple thermo-mechanical model to predict the phase transformation. We show experimentally that the SMA thin film dynamic response can be actively changed upon heating and cooling. This can be used for vibration control in micro-systems

On the use of shape memory alloy thin films to tune the dynamic response of micro-cantilevers

We investigate the effect of martensitic phase transformations on the dynamic response of commercial AFM silicon cantilevers coated with shape memory alloy (SMA) thin films. We propose a simple thermo-mechanical model to predict the phase transformation. We show experimentally that the SMA thin film dynamic response can be actively changed upon heating and cooling. This can be used for vibration control in micro-systems

Alternative technology concepts for low-cost and high-speed 2D and 3D interconnect manufacturing

The current industrial process of choice for Deep Reactive Ion Etching (DRIE) of 3D features, e.g. Through-Silicon Vias (TSVs), Microelectromechanical Systems (MEMS), etc., is the Bosch process, which uses alternative SF6 etch cycles and C4F8-based sidewall passivation cycles in a time-sequenced mode. An alternative, potentially faster and more accurate process is to have wafers pass under spatially-divided reaction zones, which are individually separated by so-called N2-gas bearings ‘curtains’ of heights down to 10–20 μm. In addition, the feature sidewalls can be protected by replacing the C4F8-based sidewall passivation cycles by cycles forming chemisorbed and highly uniform passivation layers of Al2O3 or SiO2 deposited by Atomic Layer Deposition (ALD), also in a spatially-divided mode. ALD is performed either in thermal mode, or plasma-assisted mode in order to achieve near room-temperature processing.\ud \ud For metal filling of 3D-etched TSVs, or for deposition of 2D metal conductor lines one can use Laser-Induced Forward Transfer (LIFT) of metals. LIFT is a maskless, ‘solvent’-free deposition method, utilizing different types of pulsed lasers to deposit thin material (e.g. Cu, Au, Al, Cr) layers with μm-range resolution from a transparent carrier (ribbon) onto a close-by acceptor substrate. It is a dry, single-step, room temperature process in air, suitable for different types of interconnect fabrication, e.g. TSV filling and redistribution layers (RDL), without the use of wet chemistry

Technology alternatives towards low-cost and high-speed interconnect manufacturing

In this work we will review our recent work on novel alternative and disruptive technology concepts with industrial potential for cost-effective and high-speed interconnect manufacturing, in particular on the creation (drilling and filling) of advanced interconnects like TSVs. These technologies are 1) Spatially-divided Deep Reactive Ion Etching, S-DRIE, 2) Electrochemical Micromachining, ECM, and 3) Laser-Induced Forward Transfer, LIFT. The first technique will be reviewed in detail, the other two will only shortly be described