Working Paper No. 81, A Critique of Ideas Advanced by Nicholas Georgescu-Roegen

This inquiry seeks to establish that ideas advanced by economist Nicholas Georgescu-Roegen fall short and are deserving of a critique. Certainly, Georgescu-Roegen provided a foundation for the area of inquiry known as Ecological Economics. As suggested with the title, The Entropy Law and the Economic Process (1971), in this book Professor Georgescu-Roegen relates the Law of Entropy drawn from Physics to the economic process, in an effort to raise his concern over the finiteness of resources. In the modern, industrial economic system that he considers, he regards that goods with low entropy are consumed, and that their entropy increases until reaching a state of annihilation. While indeed Georgescu-Roegen offers novel ideas, his efforts fall short by failing to consider economic systems of selected Indigenous communities that have been able to prevent the entropy process from reaching a state of annihilation within their ecosystems through conservation techniques

Letter to William Younger regarding the SEAALL Annual Meeting, August 2, 1971

A letter from H. Lane Kneedler to William Younger enclosing copies of the program for a joint SEAALL/SEAALS Annual Meeting

Letter to William Younger regarding the SEAALL Annual Meeting, September 23, 1971

A letter from H. Lane Kneedler to William Younger thanking Younger for his letter concerning the success of a joint SEAALL/SEAALS Annual Meeting

Time-resolved ferromagnetic resonance in epitaxial Fe1-xCox films

Magnetodynamics in epitaxial Fe1-xCox films on GaAs (100) are studied using time-resolved ferromagnetic resonance, in which the free precession of the magnetization after an impulsive excitation is measured using the polar Kerr effect. The sample is rotated with respect to the static and pulsed field directions, providing a complete mapping of the free energy surface and characteristic relaxation times. The magnetic response can be simulated with a simple coherent rotation model except in the immediate vicinity of switching fields. Bulk and surface anisotropies are identified, and unusual dynamics associated with the coexistence of cubic and uniaxial anisotropies are observed.Comment: PDF - 4 figure

First-principles study of nucleation, growth, and interface structure of Fe/GaAs

We use density-functional theory to describe the initial stages of Fe film growth on GaAs(001), focusing on the interplay between chemistry and magnetism at the interface. Four features appear to be generic: (1) At submonolayer coverages, a strong chemical interaction between Fe and substrate atoms leads to substitutional adsorption and intermixing. (2) For films of several monolayers and more, atomically abrupt interfaces are energetically favored. (3) For Fe films over a range of thicknesses, both Ga- and As-adlayers dramatically reduce the formation energies of the films, suggesting a surfactant-like action. (4) During the first few monolayers of growth, Ga or As atoms are likely to be liberated from the interface and diffuse to the Fe film surface. Magnetism plays an important auxiliary role for these processes, even in the dilute limit of atomic adsorption. Most of the films exhibit ferromagnetic order even at half-monolayer coverage, while certain adlayer-capped films show a slight preference for antiferromagnetic order.Comment: 11 two-column pages, 12 figures, to appear in Phys. Rev.

First Principles Calculations of Fe on GaAs (100)

We have calculated from first principles the electronic structure of 0.5 monolayer upto 5 monolayer thick Fe layers on top of a GaAs (100) surface. We find the Fe magnetic moment to be determined by the Fe-As distance. As segregates to the top of the Fe film, whereas Ga most likely is found within the Fe film. Moreover, we find an asymmetric in-plane contraction of our unit-cell along with an expansion perpendicular to the surface. We predict the number of Fe 3d-holes to increase with increasing Fe thickness on $p$-doped GaAs.Comment: 9 pages, 14 figures, submitted to PR

Scanning probe metrology in the presence of surface charge

Surface charge on insulating samples can be a significant source of error for scanning probe microscopes. We have found that it is possible to operate a scanning force microscope in a manner that makes it relatively immune to charge-induced forces while still allowing the probe tip to nondestructively follow the surface topography. The need to maintain close charge balance on the sample is thus obviated. We have used this strategy to perform critical dimension measurements on optical photomasks with the Surface/Interface Stylus NanoProfilometer. This instrument incorporates a servoed force-balance sensor. Surface topography is determined by touching the surface with contact forces between 0.1 and 1 muN. (C) 2000 American Vacuum Society. [S0734-211X(00)01706-6]

Spin-Dependent Transport in Fe/GaAs(100)/Fe Vertical Spin-Valves

The integration of magnetic materials with semiconductors will lead to the development of the next spintronics devices such as spin field effect transistor (SFET), which is capable of both data storage and processing. While the fabrication and transport studies of lateral SFET have attracted greatly attentions, there are only few studies of vertical devices, which may offer the opportunity for the future three-dimensional integration. Here, we provide evidence of two-terminal electrical spin injection and detection in Fe/GaAs/Fe vertical spin-valves (SVs) with the GaAs layer of 50 nanometers thick and top and bottom Fe electrodes deposited by molecular beam epitaxy. The spin-valve effect, which corresponds to the individual switching of the top and bottom Fe layers, is bias dependent and observed up to 20 K. We propose that the strongly bias-and temperature-dependent MR is associated with spin transport at the interfacial Fe/GaAs Schottky contacts and in the GaAs membranes, where balance between the barrier profiles as well as the dwell time to spin lifetime ratio are crucial factors for determining the device operations. The demonstration of the fabrication and spin injection in the vertical SV with a semiconductor interlayer is expected to open a new avenue in exploring the SFET

Optical determination of the Néel vector in a CuMnAs thin-film antiferromagnet

Recent breakthroughs in electrical detection and manipulation of antiferromagnets have opened a new avenue in the research of non-volatile spintronic devices.1-10 Antiparallel spin sublattices in antiferromagnets, producing zero dipolar fields, lead to the insensitivity to magnetic field perturbations, multi-level stability, ultrafast spin dynamics and other favorable characteristics which may find utility in fields ranging from magnetic memories to optical signal processing. However, the absence of a net magnetic moment and the ultra-short magnetization dynamics timescales make antiferromagnets notoriously difficult to study by common magnetometers or magnetic resonance techniques. In this paper we demonstrate the experimental determination of the Néel vector in a thin film of antiferromagnetic CuMnAs9,10 which is the prominent material used in the first realization of antiferromagnetic memory chips.10 We employ a femtosecond pump-probe magneto-optical experiment based on magnetic linear dichroism. This table-top optical method is considerably more accessible than the traditionally employed large scale facility techniques like neutron diffraction11 and Xray magnetic dichroism measurements.12-14 This optical technique allows an unambiguous direct determination of the Néel vector orientation in thin antiferromagnetic films utilized in devices directly from measured data without fitting to a theoretical model