Cryogenic scanning force microscopy of quantum Hall samples: Adiabatic transport originating in anisotropic depletion at contact interfaces

Anisotropic magneto resistances and intrinsic adiabatic transport features are generated on quantum Hall samples based on an (Al,Ga)As/GaAs heterostructure with alloyed Au/Ge/Ni contacts. We succeed to probe the microscopic origin of these transport features with a cryogenic scanning force microscope (SFM) by measuring the local potential distribution within the two-dimensional electron system (2DES). These local measurements reveal the presence of an incompressible strip in front of contacts with insulating properties depending on the orientation of the contact/2DES interface line relatively to the crystal axes of the heterostructure. Such an observation gives another microscopic meaning to the term 'non-ideal contact' used in context with the Landauer-B\"uttiker formalism applied to the quantum Hall effect.Comment: 5 pages, 4 figure

Density of States of GaAs-AlGaAs Heterostructures Deduced from Temperature Dependend Magnetocapacitance Measurements

Abstract We have analyzed the density of states of a two dimensional electron gas in a GaAs- AlGaAs hetereostructure by measuring the magnetocapacitance in magnetic fields up to 6 Tesla at temperatures below 10 K. The experimental data are well described by a Gaussian-like density of states where the linewidth à is proportional to B

Density of States in Landau Level Tails of GaAs-AlxGa1-xAs Heterostructures

From an analysis of the thermally activated resistivity as a function of the magnetic field in the quantum Hall regime we deduced the position of the Fermi energy in the mobility gap as a function of the filling factor and therefore the density of states. The measured density of states is best described by a Gaussian like profile superimposed on a constant background

Chalker-Coddington model described by an S-matrix with odd dimensions

The Chalker-Coddington network model is often used to describe the transport properties of quantum Hall systems. By adding an extra channel to this model, we introduce an asymmetric model with profoundly different transport properties. We present a numerical analysis of these transport properties and consider the relevance for realistic systems.Comment: 7 pages, 4 figures. To appear in the EP2DS-17 proceeding

Correlated electron tunneling through two separate quantum dot systems with strong capacitive interdot coupling

A system consisting of two independently contacted quantum dots with strong electrostatic interaction shows interdot Coulomb blockade when the dots are weakly tunnel coupled to their leads. It is studied experimentally how the blockade can be overcome by correlated tunneling when tunnel coupling to the leads increases. The experimental results are compared with numerical renormalization group calculations using predefined (measured) parameters. Our results indicate Kondo correlations due to the electrostatic interaction in this double quantum dot system.Comment: 5 pages, 3 figures, published in Phys. Rev. Lett. Oct. 30t

Interlayer tunneling in counterflow experiments on the excitonic condensate in quantum Hall bilayers

The effect of tunneling on the transport properties of} quantum Hall double layers in the regime of the excitonic condensate at total filling factor one is studied in counterflow experiments. If the tunnel current $I$ is smaller than a critical $I_C$, tunneling is large and is effectively shorting the two layers. For $I > I_C$ tunneling becomes negligible. Surprisingly, the transition between the two tunneling regimes has only a minor impact on the features of the filling-factor one state as observed in magneto-transport, but at currents exceeding $I_C$ the resistance along the layers increases rapidly