2 research outputs found
Dynamic Versus Static Oxidation of Nb/Al-AlO/Nb Trilayer
High quality Nb-based superconductor-insulator-superconductor (SIS) junctions
with Al oxide (AlO) tunnel barriers grown from Al overlayers are widely
reported in the literature. However, the thin barriers required for high
critical current density (J) junctions exhibit defects that result in
significant subgap leakage current that is detrimental for many applications.
High quality, high-J junctions can be realized with AlN barriers, but
control of J is more difficult than with AlO. It is therefore of
interest to study the growth of thin AlO barriers with the ultimate goal of
achieving high quality, high-J AlO junctions. In this work, 100\%\
O and 2\%\ O in Ar gas mixtures are used both statically and
dynamically to grow AlO tunnel barriers over a large range of oxygen
exposures. In situ ellipsometry is used for the first time to extensively
measure AlO tunnel barrier growth in real time, revealing a number of
unexpected patterns. Finally, a set of test junction wafers was fabricated that
exhibited the well-known dependence of J on oxygen exposure (E) in order to
further validate the experimental setup