2,184 research outputs found
Simulation of the response of SiPMs Part II: with saturation effects
A Monte Carlo program is presented which simulates the response of SiPMs in
the nonlinear regime, where the number of Geiger discharges from photons and/or
from dark counts in the time interval given by the pulse shape of a single
Geiger discharge, approaches or exceeds the number of SiPM pixels. The model
includes the effects of after-pulses, of prompt and delayed cross-talk, and of
the voltage drop over the load resistance of the readout electronics. The
results of the simulation program are compared to published results from SiPMs
with different number of pixels for different intensities and time
distributions of photons, dark-count rates, SiPM pulse shapes, and
probabilities of cross-talk and after-pulsing.Comment: 17 pages, 10 figures, 3 table
Influence of X-ray Irradiation on the Properties of the Hamamatsu Silicon Photomultiplier S10362-11-050C
We have investigated the effects of X-ray irradiation to doses of 0, 200 Gy,
20 kGy, 2 MGy, and 20 MGy on the Hamamatsu silicon-photomultiplier (SiPM)
S10362-11-050C. The SiPMs were irradiated without applied bias voltage. From
current-voltage, capacitance/conductance-voltage, -frequency, pulse-shape, and
pulse-area measurements, the SiPM characteristics below and above breakdown
voltage were determined. Significant changes of some SiPM parameters are
observed. Up to a dose of 20 kGy the performance of the SiPMs is hardly
affected by X-ray radiation damage. For doses of 2 and 20 MGy the SiPMs operate
with hardly any change in gain, but with a significant increase in dark-count
rate and cross-talk probability.Comment: 21 pages,30 figure
Design and First Tests of a Radiation-Hard Pixel Sensor for the European X-Ray Free-Electron Laser
The high intensity and high repetition rate of the European X-ray
Free-Electron Laser, presently under construction in Hamburg, requires silicon
sensors which can stand X-ray doses of up to 1 GGy for 3 years of operation at
high bias voltage. Within the AGIPD Collaboration the X-ray-radiation damage in
MOS Capacitors and Gate-Controlled Diodes fabricated by four vendors on
high-ohmic n-type silicon with two crystal orientations and dif- ferent
technological parameters, has been studied for doses between 1 kGy and 1 GGy.
The extracted values of oxide-charge and surface-current densi- ties have been
used in TCAD simulations, and the layout and technological parameters of the
AGIPD pixel sensor optimized. It is found that the op- timized layout for high
X-ray doses is significantly different from the one for non-irradiated sensors.
First sensors and test structures have been de-livered in early 2013.
Measurement results for X-ray doses of 0 to 10 MGy and their comparison to
simulations are presented. They demonstrate that the optimization has been
successful and that the sensors fulfill the required specifications
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