Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers

Takayoshi Shimura, Michihiro Shimizu, Shinichiro Horiuchi, Heiji Watanabe, Kiyoshi Yasutake, Masataka Umeno, "Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers", Appl. Phys. Lett. 89, 111923 (2006) https://doi.org/10.1063/1.2353812

Suppression of surface segregation and heavy arsenic doping into silicon during selective epitaxial chemical vapor deposition under atmospheric pressure

The authors investigated the effects of the growth rate and temperature on the surface segregation during in situ As-doped selective epitaxial growth under atmospheric pressure. It was confirmed that high growth rate and high temperature suppress surface segregation. A film with a high As concentration (7.5× 10^{19} at. cm^3) and a smooth surface was obtained by optimizing these conditions.Tetsuya Ikuta, Shigeru Fujita, Hayato Iwamoto, Shingo Kadomura, Takayoshi Shimura, Heiji Watanabe and Kiyoshi Yasutake, "Suppression of surface segregation and heavy arsenic doping into silicon during selective epitaxial chemical vapor deposition under atmospheric pressure", Appl. Phys. Lett. 91, 092115 (2007) https://doi.org/10.1063/1.2778539