The aerodynamical laboratory of the Vienna Technical High School

We will give here only a short explanation of the operation of the plant and deal principally with the question of what it has accomplished

Phonon plasmon interaction in ternary group-III-nitrides

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 101, 041909 (2012) and may be found at https://doi.org/10.1063/1.4739415.Phonon-plasmon-coupling in the ternary group-III-nitrides InGaN and AlGaN is investigated experimentally and theoretically. Based on the observation of broadening and shifting of the A1(LO) mode in AlGaN upon Si-doping, a lineshape analysis was performed to determine the carrier concentration. The results obtained by this method are in excellent agreement to those from Hall measurements, confirming the validity of the employed model. Finally, neglecting phonon and plasmon damping, the Raman shift of the A1(LO) mode in dependence of the carrier concentration for AlGaN and InGaN is calculated. This enables a fast and contactless determination of carrier concentrations in the future.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

An in situ XAS study of the cobalt rhenium catalyst for ammonia synthesis

A cobalt rhenium catalyst active for ammonia synthesis at 400 °C and ambient pressure was studied using in situ XAS to elucidate the reducibility and local environment of the two metals during reaction conditions. The ammonia reactivity is greatly affected by the gas mixture used in the pre-treatment step. Following H2/Ar pre-treatment, a subsequent 20 min induction period is also observed before ammonia production occurs whereas ammonia production commences immediately following comparable H2/N2 pre-treatment. In situ XAS at the Co K-edge and Re LIII-edge show that cobalt initiates reduction, undergoing reduction between 225 and 300 °C, whereas reduction of rhenium starts at 300 °C. The reduction of rhenium is near complete below 400 °C, as also confirmed by H2-TPR measurements. A synergistic co-metal effect is observed for the cobalt rhenium system, as complete reduction of both cobalt and rhenium independently requires higher temperatures. The phases present in the cobalt rhenium catalyst during ammonia production following both pre-treatments are largely bimetallic Co–Re phases, and also monometallic Co and Re phases. The presence of nitrogen during the reduction step strongly promotes mixing of the two metals, and the bimetallic Co–Re phase is believed to be a pre-requisite for activity

Recombination dynamics in ZnO nanowires: Surfaces states versus mode quality factor

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 97, 133116 (2010) and may be found at https://doi.org/10.1063/1.3496444.In this work, we investigate the influence of finite size on the recombinations dynamics of ZnO nanowires. We demonstrate that diameter as well as length of nanowires determine the lifetime of the neutral donor bound excitons. Our findings suggest that while the length is mainly responsible for different mode quality factors of the cavity-like nanowires, the diameter determines the influence of surface states as alternative recombinations channels for the optical modes trapped in the nanocavity. In addition, comparing nanowires grown using different catalyst we show that the surfaces states strongly depend on each precursor characteristics.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, BauelementeDFG, 53182490, EXC 314: Unifying Concepts in Catalysi

Variability survey in the CoRoT SRa01 field: Implications of eclipsing binary distribution on cluster formation in NGC 2264

Time-series photometry of the CoRoT field SRa01 was carried out with the Berlin Exoplanet Search Telescope II (BEST II) in 2008/2009. A total of 1,161 variable stars were detected, of which 241 were previously known and 920 are newly found. Several new, variable young stellar objects have been discovered. The study of the spatial distribution of eclipsing binaries revealed the higher relative frequency of Algols toward the center of the young open cluster NGC 2264. In general Algol frequency obeys an isotropic distribution of their angular momentum vectors, except inside the cluster, where a specific orientation of the inclinations is the case. We suggest that we see the orbital plane of the binaries almost edge-on.Comment: 18 pages, 8 figures, accepted for publication in Ap

The Berlin Exoplanet Search Telescope II. Catalog of Variable Stars. I. Characterization of Three Southern Target Fields

A photometric survey of three Southern target fields with BEST II yielded the detection of 2,406 previously unknown variable stars and an additional 617 stars with suspected variability. This study presents a catalog including their coordinates, magnitudes, light curves, ephemerides, amplitudes, and type of variability. In addition, the variability of 17 known objects is confirmed, thus validating the results. The catalog contains a number of known and new variables that are of interest for further astrophysical investigations, in order to, e.g., search for additional bodies in eclipsing binary systems, or to test stellar interior models. Altogether, 209,070 stars were monitored with BEST II during a total of 128 nights in 2009/2010. The overall variability fraction of 1.2-1.5% in these target fields is well comparable to similar ground-based photometric surveys. Within the main magnitude range of $R\in\left[11,17\right]$, we identify 0.67(3)% of all stars to be eclipsing binaries, which indicates a completeness of about one third for this particular type in comparison to space surveys.Comment: accepted to A

Lithium related deep and shallow acceptors in Li-doped ZnO nanocrystals

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 107, 024311 (2010) and may be found at https://doi.org/10.1063/1.3275889.We study the existence of Li-related shallow and deep acceptor levels in Li-doped ZnO nanocrystals using electron paramagnetic resonance (EPR) and photoluminescence (PL) spectroscopy. ZnO nanocrystals with adjustable Li concentrations between 0% and 12% have been prepared using organometallic precursors and show a significant lowering of the Fermi energy upon doping. The deep Li acceptor with an acceptor energy of 800 meV could be identified in both EPR and PL measurements and is responsible for the yellow luminescence at 2.2 eV. Additionally, a shallow acceptor state at 150 meV above the valence band maximum is made responsible for the observed donor-acceptor pair and free electron-acceptor transitions at 3.235 and 3.301 eV, possibly stemming from the formation of Li-related defect complexes acting as acceptors.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in J. Appl. Phys. 113, 103504 (2013) and may be found at https://doi.org/10.1063/1.4794094.Compensation effects in metal organic chemical vapour deposition grown GaN doped with magnesium are investigated with Raman spectroscopy and photoluminescence measurements. Examining the strain sensitive E2(high) mode, an increasing compressive strain is revealed for samples with Mg-concentrations lower than 7 × 1018 cm−3. For higher Mg-concentrations, this strain is monotonically reduced. This relaxation is accompanied by a sudden decrease in crystal quality. Luminescence measurements reveal a well defined near band edge luminescence with free, donor bound, and acceptor bound excitons as well as a characteristic donor acceptor pair (DAP) luminescence. Following recent results, three acceptor bound excitons and donor acceptor pairs are identified. Along with the change of the strain, a strong modification in the luminescence of the dominating acceptor bound exciton and DAP luminescence is observed. The results from Raman spectroscopy and luminescence measurements are interpreted as fingerprints of compensation effects in GaN:Mg leading to the conclusion that compensation due to defect incorporation triggered by Mg-doping already affects the crystal properties at doping levels of around 7 × 1018 cm−3. Thereby, the generation of nitrogen vacancies is introduced as the driving force for the change of the strain state and the near band edge luminescence.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 110, 093503 (2011) and may be found at https://doi.org/10.1063/1.3656987.We report on fundamental structural and optical properties of lateral polarity junctions in GaN. GaN with Ga- to N-polar junctions was grown on sapphire using an AlN buffer layer. Results from scanning electron microscopy and Raman spectroscopy measurements indicate a superior quality of the Ga-polar GaN. An extremely strong luminescence signal is observed at the inversion domain boundary (IDB). Temperature dependent micro photoluminescence measurements are used to reveal the recombination processes underlying this strong emission. At 5 K the emission mainly arises from a stripe along the inversion domain boundary with a thickness of 4-5 μm. An increase of the temperature initially leads to a narrowing to below 2 μm emission area width followed by a broadening at temperatures above 70 K. The relatively broad emission area at low temperatures is explained by a diagonal IDB. It is shown that all further changes in the emission area width are related to thermalization effects of carriers and defects attracted to the IDB. The results are successfully used to confirm a theoretical model for GaN based lateral polarity junctions. Due to the strong and pronounced emission of IDBs even at elevated temperatures, it is demonstrated that lateral polarity junctions exhibit a strong potential for future high efficiency devices.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement