Surface Shubnikov-de Hass oscillations and non-zero Berry phases of the topological hole conduction in Tl1−x_{1-x}Bi1+x_{1+x}Se2_2

We report the observation of two-dimensional Shubnikov-de Hass (SdH) oscillations in the topological insulator Tl$_{1-x}$Bi$_{1+x}$Se$_2$. Hall effect measurements exhibited electron-hole inversion in samples with bulk insulating properties. The SdH oscillations accompanying the hole conduction yielded a large surface carrier density of $n_{\rm{s}}=5.1 \times10^{12}$/cm$^2$, with the Landau-level fan diagram exhibiting the $\pi$ Berry phase. These results showed the electron-hole reversibility around the in-gap Dirac point and the hole conduction on the surface Dirac cone without involving the bulk metallic conduction.Comment: 5 pages, 4 figure

Precise determination of two-carrier transport properties in the topological insulator TlBiSe2_2

We report the electric transport study of the three-dimensional topological insulator TlBiSe$_2$. We applied a newly developed analysis procedure and precisely determined two-carrier transport properties. Magnetotransport properties revealed a multicarrier conduction of high- and low-mobility electrons in the bulk, which was in qualitative agreement with angle-resolved photoemission results~[K. Kuroda $et~al.$, Phys. Rev. Lett. $\bm{105}$, 146801 (2010)]. The temperature dependence of the Hall mobility was explained well with the conventional Bloch-Gr{\"u}neisen formula and yielded the Debye temperature $\varTheta_{\rm{D}}=113 \pm 14$~K. The results indicate that the scattering of bulk electrons is dominated by acoustic phonons.Comment: 6 pages, 5 figures, to be published in Physical Review

Photon correlation in GaAs self-assembled quantum dots

We report on photon coincidence measurement in a single GaAs self-assembled quantum dot (QD) using a pulsed excitation light source. At low excitation, when a neutral exciton line was present in the photoluminescence (PL) spectrum, we observed nearly perfect single photon emission from an isolated QD at 670 nm wavelength. For higher excitation, multiple PL lines appeared on the spectra, reflecting the formation of exciton complexes. Cross-correlation functions between these lines showed either bunching or antibunching behavior, depending on whether the relevant emission was from a biexciton cascade or a charged exciton recombination.Comment: 5 pages, 3 figure

Adsorption enhancement of nitrogen gas by atomically heterogeneous nanospace of boron nitride

In this study, porous boron nitride (p-BN) with hexagonal phase boron nitride (h-BN) pore walls was synthesized using high-temperature calcination. Negligible variation in pore-wall structure can be observed in powder X-ray diffraction (XRD) profiles and infrared (IR) spectra. However, a highly stable p-BN with a stable pore structure even at 973 K under the oxidative conditions is obtained when synthesized at higher than 1573 K under nitrogen gas flow. For p-BN, this stability is obtained by generating h-BN microcrystals. Nitrogen adsorption–desorption isotherms at 77 K provide type-IV features and typical adsorption–desorption hysteresis, which suggests micropore and mesopore formation. Moreover, adsorption–desorption isotherms of Ar at 87 K are measured and compared with those of nitrogen. The relative adsorbed amount of nitrogen (i.e., the amount of nitrogen normalized by that of Ar at each relative pressure or adsorption potential value) on p-BN is considerably larger than that on microporous carbon at low-pressure regions, which suggests the existence of strong adsorption sites on the p-BN surface. In fact, the relative number of adsorbed nitrogen molecules to that of Ar on p-BN is, at most, 150%–200% larger than that on microporous carbon for the same adsorption potential state. Furthermore, additional adsorption enhancement to nitrogen between P/P0 = 10−5 and 10−3 can be observed for p-BN treated at 1673 K, which suggests the uniformly adsorbed layer formation of nitrogen molecules in the vicinity of a basal planar surface. Thus, unlike typical nanoporous sp2 carbons, p-BN materials have the potential to enhance adsorption for certain gas species because of their unique surface state

Conduction Effect of Thermal Radiation in a Metal Shield Pipe in a Cryostat for a Cryogenic Interferometric Gravitational Wave Detector

A large heat load caused by thermal radiation through a metal shield pipe was observed in a cooling test of a cryostat for a prototype of a cryogenic interferometric gravitational wave detector. The heat load was approximately 1000 times larger than the value calculated by the Stefan-Boltzmann law. We studied this phenomenon by simulation and experiment and found that it was caused by the conduction of thermal radiation in a metal shield pipe.Comment: 7 pages, 4 figures, 2 tables, Submitted to Jpn. J. Appl. Phy