Studies on structural, electrical, and optical properties of Cu doped As-Se-Te chalcogenide glasses

Cu doped chalcogenide (ChG) glassy films in the As-Se-Te glass system have been prepared using thermal evaporation techniques. Single-source evaporation from bulk (1-x) As(0.40)Se(0.35)Te(0.25)+x Cu glasses with x=0.05, 0.075, 0.10, 0.125, and 0.15, as well as dual-source coevaporation from As-chalcogenide and Cu-chalcogenide binary glasses as source materials, has been explored. We have shown that it is not possible to deposit high concentration Cu doped ChG glassy films, from the Cu doped bulk samples using single-source evaporation. However, using the dual-source coevaporation technique, we have demonstrated that the films can be doped with high concentrations of Cu. Micro-Raman spectroscopy has been utilized to verify that Cu is introduced into the glass network without disrupting the basic As-chalcogen units. Optical measurements have shown that introduction of Cu decreases the band gap of As-Se-Te glasses. The electrical properties of the investigated films have been measured at different temperatures and it has been shown that Cu incorporation in the As-Se-Te glass system vastly improves electrical conductivity. Moreover, we have shown that the temperature dependence of electrical conductivity can be fitted assuming variable range hopping between states near the Fermi level

Si-CMOS compatible materials and devices for mid-IR microphotonics

CMOS compatible mid-Infrared (mid-IR) microphotonics including (1) broadband SOUP (Silicon on Oxide Undercladding Pedestal) waveguides; and (2) mid-IR transparent chalcogenide glass (ChGs) waveguides monolithically integrated with a PbTe thin film photodetector; are demonstrated. Using a pedestal undercladding geometry we obtain an optical loss for our Si waveguide which is 10 dB/cm lower compared to other waveguides using planar SiO2 cladding at lambda = 5 mu m, and a fundamental mode is seen over a broad mid-IR spectral range. To realize a fully integrated mid-IR on-chip system, in parallel, we develop PbTe thin film detectors that can be deposited on various mid-IR platforms through a thermal evaporation technique, offering high photoresponsivity of 25 V/W from lambda = 1 mu m to 4 mu m. The detector can be efficiently integrated, using a suitable spacer, to an underlying Chalcogenide glass (ChGs) waveguide. Our results of low loss waveguides and integrated thin film detectors enable Si-CMOS microphotonics for mid-IR applications