Generalized BFT Formalism of Electroweak Theory in the Unitary Gauge

We systematically embed the SU(2)$\times$U(1) Higgs model in the unitary gauge into a fully gauge-invariant theory by following the generalized BFT formalism. We also suggest a novel path to get a first-class Lagrangian directly from the original second-class one using the BFT fields.Comment: 14 pages, Latex, no figure

The quantization of the chiral Schwinger model based on the BFT-BFV formalism II

We apply an improved version of Batalin-Fradkin-Tyutin (BFT) Hamiltonian method to the a=1 chiral Schwinger Model, which is much more nontrivial than the a>1.$one. Furthermore, through the path integral quantization, we newly resolve the problem of the non-trivial$\delta$function as well as that of the unwanted Fourier parameter$\xi$ in the measure. As a result, we explicitly obtain the fully gauge invariant partition function, which includes a new type of Wess-Zumino (WZ) term irrelevant to the gauge symmetry as well as usual WZ action.Comment: 17 pages, To be published in J. Phys.

Electronic structures of layered perovskite Sr2MO4 (M=Ru, Rh, and Ir)

We investigated the electronic structures of the two-dimensional layered perovskite Sr$_{2}$\textit{M}O$_{4}$ (\textit{M}=4\textit{d} Ru, 4\textit{d} Rh, and 5\textit{d} Ir) using optical spectroscopy and polarization-dependent O 1\textit{s} x-ray absorption spectroscopy. While the ground states of the series of compounds are rather different, their optical conductivity spectra $\sigma(\omega)$ exhibit similar interband transitions, indicative of the common electronic structures of the 4\textit{d} and 5\textit{d} layered oxides. The energy splittings between the two $e_{g}$ orbitals, $i.e.$, $d_{3z^{2}-r^{2}}$ and $d_{x^{2}-y^{2}}$, are about 2 eV, which is much larger than those in the pseudocubic and 3\textit{d} layered perovskite oxides. The electronic properties of the Sr$_{2}$\textit{M}O$_{4}$ compounds are discussed in terms of the crystal structure and the extended character of the 4\textit{d} and 5\textit{d} orbitals

Dielectric constants of Ir, Ru, Pt, and IrO2: Contributions from bound charges

We investigated the dielectric functions $\epsilon$($\omega$) of Ir, Ru, Pt, and IrO$_2$, which are commonly used as electrodes in ferroelectric thin film applications. In particular, we investigated the contributions from bound charges $\epsilon^{b}$($\omega$), since these are important scientifically as well as technologically: the $\epsilon_1^{b}$(0) of a metal electrode is one of the major factors determining the depolarization field inside a ferroelectric capacitor. To obtain $\epsilon_1^{b}$(0), we measured reflectivity spectra of sputtered Pt, Ir, Ru, and IrO2 films in a wide photon energy range between 3.7 meV and 20 eV. We used a Kramers-Kronig transformation to obtain real and imaginary dielectric functions, and then used Drude-Lorentz oscillator fittings to extract $\epsilon_1^{b}$(0) values. Ir, Ru, Pt, and IrO$_2$ produced experimental $\epsilon_1^{b}$(0) values of 48$\pm$10, 82$\pm$10, 58$\pm$10, and 29$\pm$5, respectively, which are in good agreement with values obtained using first-principles calculations. These values are much higher than those for noble metals such as Cu, Ag, and Au because transition metals and IrO$_2$ have such strong d-d transitions below 2.0 eV. High $\epsilon_1^{b}$(0) values will reduce the depolarization field in ferroelectric capacitors, making these materials good candidates for use as electrodes in ferroelectric applications.Comment: 26 pages, 6 figures, 2 table

Electron Spin Relaxation under Drift in GaAs

Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of moderate drift fields and/or non-zero injection energies. For relatively low fields (a couple of kV/cm), a substantial amount of spin polarization is preserved for several microns at 300 K. However, it is also found that the spin relaxation rate increases rapidly with the drift field, scaling as the square of the electron wavevector in the direction of the field. When the electrons are injected with a high energy, a pronounced decrease is observed in the spin relaxation length due to an initial increase in the spin precession frequency. Hence, high-field or high-energy transport conditions may not be desirable for spin-based devices.Comment: 4 pages, 3 figures, one table. Scheduled for publication in the May 26, 2003 issue of Applied Physics Letters (039321APL