Compositional changes on GaN surfaces under low-energy ion bombardment studied by synchrotron-based spectroscopies

We have investigated compositional changes on GaNsurfaces under Ar-ion bombardment using synchrotron-based high-resolution x-rayphotoemission (PES) and near-edge x-ray absorption fine structure(NEXAFS)spectroscopy. The low-energy ion bombardment of GaN produces a Ga-rich surface layer which transforms into a metallic Ga layer at higher bombarding energies. At the same time, the photoemissionspectra around N 1s core levels reveal the presence of both uncoordinated nitrogen and nitrogen interstitials, which we have analyzed in more details by x-rayabsorption measurements at N K edge. We have demonstrated that PES and NEXAFS provide a powerful combination for studying the compositional changes on GaNsurfaces. A mechanism for the relocation and loss of nitrogen during ion bombardment in agreement with some recent experimental and theoretical studies of defect formation in GaN has been proposed.P.N.K.D. is grateful for the financial support of the Australian Research Council

Evolution of the Protein Interaction Network of Budding Yeast: Role of the Protein Family Compatibility Constraint

Understanding of how protein interaction networks (PIN) of living organisms have evolved or are organized can be the first stepping stone in unveiling how life works on a fundamental ground. Here we introduce a hybrid network model composed of the yeast PIN and the protein family interaction network. The essential ingredient of the model includes the protein family identity and its robustness under evolution, as well as the three previously proposed ones: gene duplication, divergence, and mutation. We investigate diverse structural properties of our model with parameter values relevant to yeast, finding that the model successfully reproduces the empirical data.Comment: 5 pages, 5 figures, 1 table. Title changed. Final version published in JKP