Incorporating Language-Driven Appearance Knowledge Units with Visual Cues in Pedestrian Detection

Large language models (LLMs) have shown their capability in understanding contextual and semantic information regarding appearance knowledge of instances. In this paper, we introduce a novel approach to utilize the strength of an LLM in understanding contextual appearance variations and to leverage its knowledge into a vision model (here, pedestrian detection). While pedestrian detection is considered one of crucial tasks directly related with our safety (e.g., intelligent driving system), it is challenging because of varying appearances and poses in diverse scenes. Therefore, we propose to formulate language-driven appearance knowledge units and incorporate them with visual cues in pedestrian detection. To this end, we establish description corpus which includes numerous narratives describing various appearances of pedestrians and others. By feeding them through an LLM, we extract appearance knowledge sets that contain the representations of appearance variations. After that, we perform a task-prompting process to obtain appearance knowledge units which are representative appearance knowledge guided to be relevant to a downstream pedestrian detection task. Finally, we provide plentiful appearance information by integrating the language-driven knowledge units with visual cues. Through comprehensive experiments with various pedestrian detectors, we verify the effectiveness of our method showing noticeable performance gains and achieving state-of-the-art detection performance.Comment: 11 pages, 4 figures, 9 table

Influence of bank geometry on the electrical characteristics of printed organic field-effect transistors

The electrical characteristics of organic field-effect transistors (OFETs) based on small-molecule organic semiconductors (OSCs) have been significantly improved by employing various fabrication techniques in solution processes to enhance the OSC crystallinity. However, complicated fabrication and inhomogeneity of OFETs remain as challenges before commercialization. In this work, we have efficiently controlled the size and orientation of 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) crystalline domains by tuning the Cytop bank dimension, in which OSC inks are printed, to improve the device performance. The optimized bank pattern forms uniform thin film morphology and well-aligned TIPS-pentacene crystalline domains along the charge transport direction, resulting in four-fold increase in field-effect mobility and one third reduction in relative standard deviation.11Ysciescopu

Targeting the Mechanisms of Resistance to Chemotherapy and Radiotherapy with the Cancer Stem Cell Hypothesis

Despite advances in treatment, cancer remains the 2nd most common cause of death in the United States. Poor cure rates may result from the ability of cancer to recur and spread after initial therapies have seemingly eliminated detectable signs of disease. A growing body of evidence supports a role for cancer stem cells (CSCs) in tumor regrowth and spread after initial treatment. Thus, targeting CSCs in combination with traditional induction therapies may improve treatment outcomes and survival rates. Unfortunately, CSCs tend to be resistant to chemo- and radiation therapy, and a better understanding of the mechanisms underlying CSC resistance to treatment is necessary. This paper provides an update on evidence that supports a fundamental role for CSCs in cancer progression, summarizes potential mechanisms of CSC resistance to treatment, and discusses classes of drugs currently in preclinical or clinical testing that show promise at targeting CSCs

Solution-Processed Vertically Stacked Complementary Organic Circuits with Inkjet-Printed Routing

The fabrication and measurements of solution-processed vertically stacked complementary organic field-effect transistors (FETs) with a high static noise margin (SNM) are reported. In the device structure, a bottom-gate p-type organic FET (PFET) is vertically integrated on a top-gate n-type organic FET (NFET) with the gate shared in-between. A new strategy has been proposed to maximize the SNM by matching the driving strengths of the PFET and the NFET by independently adjusting the dielectric capacitance of each type of transistor. Using ideally balanced inverters with the transistor-on-transistor structure, the first examples of universal logic gates by inkjet-printed routing are demonstrated. It is believed that this work can be extended to large-scale complementary integrated circuits with a high transistor density, simpler routing path, and high yield

Научная инициатива иностранных студентов и аспирантов. Т. 2

Сборник представляет интерес для специалистов и исследователей в области математики, механики, электротехники, информатики и вычислительных систем, физики, химии, геологии, гуманитарных наук и экономики

Gonadal-sparing total body irradiation with the use of helical tomotherapy for nonmalignant indications

Background: The aim was to demonstrate the feasibility and technique of gonadal sparing total body irradiation (TBI) with helical tomotherapy. Total body irradiation is a common part of the conditioning regimen prior to allogeneic stem cell transplantation. Shielding or dose-reduction to the gonads is often desired to preserve fertility, particularly in young patients undergoing transplant for non-malignant indications. Helical tomotherapy (HT) has been shown to be superior to traditional TBI delivery for organ at risk (OAR) doses and dose homogeneity. Materials and methods: We present two representative cases (one male and one female) to illustrate the feasibility of this technique, each of whom received 3Gy in a single fraction prior to allogeneic stem cell transplant for benign indications. The planning target volume (PTV) included the whole body with a subtraction of OARs including the lungs, heart, and brain (each contracted by 1cm) as well as the gonads (testicles expanded by 5 cm and ovaries expanded by 0.5 cm). Results: For the male patient we achieved a homogeneity index of 1.35 with a maximum and median planned dose to the testes of 0.53 Gy and 0.35 Gy, respectively. In-vivo dosimetry demonstrated an actual received dose of 0.48 Gy. For the female patient we achieved a homogeneity index of 1.13 with a maximum and median planned dose to the ovaries of 1.66 Gy and 0.86 Gy, respectively. Conclusion: Gonadal sparing TBI is feasible and deliverable using HT in patients with non-malignant diseases requiring TBI as part of a pre-stem cell transplant conditioning regimen

A State-Run Enterprise: A Bane or a Boon?

In the less than 70 years since Korean liberation, Korea has grown to be one of the world's top five ship-owning countries in 2014. This can be attributed to a few factors such as government policy, Korea Shipping Corporation (KSC, hereafter) and merchant marine officers. This paper will expound the true motivations of the establishment and the privatization of KSC in 1950 and in 1968, respectively. KSC, as Korea's national shipping company, sailed along a very unusual course of development. It was established in 1950 not to foster and develop Korea's shipping industry but to help alleviate the financial burdens of the fledgling Korean government. The main cause of privatizing KSC in 1968 was a purely political decision, not an economic one as it overlapped with the rapid growth period of the shipping industry in the world, as well as in Korea. In sum, KSC, a state-run enterprise, was a bane in the short run but a boon in the long run for both the Korean government and Korea's shipping industry. If we can believe KSC followed the ordinary sailing route as a state-run enterprise, we might develop a new opinion that the national shipping company might be a financial burden in a short period, but various benefits over a long period

Static Response of Three-Dimensional and Printed Complementary Organic TFTs-Based Static Random-Access Memory

IEEEA three-dimensional (3-D) and printed static random-access memory (SRAM) based on complementary organic thin-film transistors is demonstrated. The SRAM exhibited the smallest area of 2.1 mm2, the highest normalized static noise margin of 62%, and the maximum gain of 16.8 V/V compared to the reported values of organic SRAM cells. The transistors’ 3-D integration minimizes the cell area. The 3-D SRAM cell design enables us to match the strengths of transistors by modifying the dielectric thickness without changing the channel geometry. This high-performance complementary organic thin-film transistors-based SRAM shows its high application potential in large-scale and low-cost wearable intelligent electronics for data storage and processing.11Nsciescopu