5 research outputs found

    Enhanced efficiency of crystalline Si solar cells based on kerfless-thin wafers with nanohole arrays

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    Several techniques have been proposed for kerfless wafering of thin Si wafers, which is one of the most essential techniques for reducing Si material loss in conventional wafering methods to lower cell cost. Proton induced exfoliation is one of promising kerfless techniques due to the simplicity of the process of implantation and cleaving. However, for application to high efficiency solar cells, it is necessary to cope with some problems such as implantation damage removal and texturing of (111) oriented wafers. This study analyzes the end-of-range defects at both kerfless and donor wafers and ion cutting sites. Thermal treatment and isotropic etching processes allow nearly complete removal of implantation damages in the cleaved-thin wafers. Combining laser interference lithography and a reactive ion etch process, a facile nanoscale texturing process for the kerfless thin wafers of a (111) crystal orientation has been developed. We demonstrate that the introduction of nanohole array textures with an optimal design and complete damage removal lead to an improved efficiency of 15.2% based on the kerfless wafer of a 48 mu m thickness using the standard architecture of the Al back surface field

    Simple Pretreatment Method Development for Iron and Calcium Carbonate Samples

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    From the 20th International Radiocarbon Conference held in Kona, Hawaii, USA, May 31-June 3, 2009.Since iron artifacts generally contain trace amounts of carbon, an iron sample needs to be relatively large, as compared to other materials, and a specially designed combustion system is required. An elemental analyzer (EA) was used for the combustion of iron without any special chemical treatment. CO2 gas with 1 mg of carbon was obtained from the combustion of an iron artifact by using an EA and reduced to graphite for accelerator mass spectrometry (AMS) measurement. In this work, AMS dating results done at the Korea Institute of Geoscience and Mineral Resources (KIGAM) for several ancient iron artifacts are presented and compared with independently estimated ages. This method was found to be useful for the pretreatment of iron artifacts that contained 0.1% carbon. A simple pretreatment method using an EA was also applied to calcium carbonate (CaCO3) samples. Samples were preheated overnight at 100-300 C, without any special chemical treatment. This removed modern CO2 contamination and the background level decreased to a comparable value measured in samples treated with phosphoric acid under vacuum.The Radiocarbon archives are made available by Radiocarbon and the University of Arizona Libraries. Contact [email protected] for further information.Migrated from OJS platform February 202

    Depth profiling of ultrathin films using medium energy ion scattering

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    The medium energy ion scattering (MEIS) system at the University of Western Ontario has been modified by replacing the original one-dimensional position sensitive detector with a 2-D array. Calibration and analysis procedures for quantitative depth profiling are devised and established in this work: distortion correction, image tiling, charge state distribution of the scattered hydrogen ions, etc. The software to simultaneously control the sample manipulator (three orthogonal rotations), toroidal electrostatic analyzer and spectrum acquisition has been developed using LabViewR. This development makes for easy sample alignment to the incident ion beam and automatically collects the step images. Additionally, the tiling procedure using corrected step images is accomplished within LabViewR to produce a final energy\u2013angle spectra. Our QUARK (quantitative analysis of Rutherford kinematics) spectrum simulation package has been modified to provide for non-linear least squares fitting to a measured MEIS energy spectrum. As a reference for quantitative analysis, a shallow Sb-implanted graphite sample was used with normalization to the height of the thick target carbon region by applying 1H stopping power values from Konac et al. [Nucl. Instr. Meth. Phys. Res. B 136\u2013138 (1998) 159]. To determine the system suitability for compositional analysis, Zr silicate films of thickness 2\u20137 nm on Si (1 0 0) substrates have been characterized by MEIS, RBS and NRA. The absolute areal densities of constituent elements are in good agreement (within 15%) among the three methods.Peer reviewed: YesNRC publication: Ye
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