Epitaxial LaFeAsOF thin films grown by pulsed laser deposition

Superconducting and epitaxially grown LaFeAsOF thin films were successfully prepared on (001)-oriented LaAlO3 substrates using pulsed laser deposition. The prepared thin films show exclusively a single in-plane orientation with epitaxial relation (001)[100] parallel to (001)[100] and a FWHM value of 1deg. Furthermore, resistive measurement of the superconducting transition temperature revealed a Tc90 of 25K with a high residual resistive ratio of 6.8. The applied preparation technique, standard thin film pulsed laser deposition at room temperature in combination with a subsequent post annealing process, is suitable for fabrication of high quality LaFeAsO1-xFx thin films. A high upper critical field of 76.2 T was evaluated for magnetic fields applied perpendicular to the c-axis and the anisotropy was calculated to be 3.3 assuming single band superconductivity.Comment: 6 pages, 4 Figure

Point-contact study of ReFeAs(1-x)Fx (Re=La, Sm) superconducting films

Point-contact (PC) Andreev-reflection (AR) measurements of the superconducting gap in iron-oxipnictide ReFeAsO_{1-x}F_x (Re=La, Sm) films have been carried out. The value of the gap is distributed in the range 2\Delta \simeq 5-10 meV (for Re=Sm) with a maximum in the distribution around 6 meV. Temperature dependence of the gap \Delta(T) can be fitted well by BCS curve giving reduced gap ratio 2\Delta /kT_c^*\simeq 3.5 (here T_c^* is the critical temperature from the BCS fit). At the same time, an expected second larger gap feature was difficult to resolve distinctly on the AR spectra making determination reliability of the second gap detection questionable. Possible reasons for this and the origin of other features like clear-cut asymmetry in the AR spectra and current regime in PCs are discussed.Comment: 6 two-column pages, 6 figs., 26 Refs., to be published in Superconductor Science and Technolog

Scaling behaviour of the critical current in clean epitaxial Ba(Fe1-xCox)2As2 thin films

The angular-dependent critical current density, Jc(theta), and the upper critical field, Hc2(theta), of epitaxial Ba(Fe1-xCox)2As2 thin films have been investigated. No Jc(theta) peaks for H || c were observed regardless of temperatures and magnetic fields. In contrast, Jc(theta) showed a broad maximum at theta=90 degree, which arises from intrinsic pinning. All data except at theta=90 degree can be scaled by the Blatter plot. Hc2(theta) near Tc follows the anisotropic Ginzburg-Landau expression. The mass anisotropy increased from 1.5 to 2 with increasing temperature, which is an evidence for multi-band superconductivity.Comment: Accepted in Physical Review B rapid communication

DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2 epitaxial films

DC superconducting quantum interference devices (dc-SQUIDs) were fabricated in Co-doped BaFe2As2 epitaxial films on (La, Sr)(Al, Ta)O3 bicrystal substrates with 30deg misorientation angles. The 18 x 8 micro-meter^2 SQUID loop with an estimated inductance of 13 pH contained two 3 micro-meter wide grain boundary junctions. The voltage-flux characteristics clearly exhibited periodic modulations with deltaV = 1.4 micro-volt at 14 K, while the intrinsic flux noise of dc-SQUIDs was 7.8 x 10^-5 fai0/Hz^1/2 above 20 Hz. The rather high flux noise is mainly attributed to the small voltage modulation depth which results from the superconductor-normal metal-superconductor junction nature of the bicrystal grain boundary

Thin Film Growth and Device Fabrication of Iron-Based Superconductors

Iron-based superconductors have received much attention as a new family of high-temperature superconductors owing to their unique properties and distinct differences from cuprates and conventional superconductors. This paper reviews progress in thin film research on iron-based superconductors since their discovery for each of five material systems with an emphasis on growth, physical properties, device fabrication, and relevant bulk material properties.Comment: To appear in J. Phys. Soc. Jp