3 research outputs found

    Radiation Damage in the Structure of the CR-39 Nuclear Detector Material as A Result of the Alpha's Energy Loss

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    In this work, the damage caused by the passage of alpha particles inside the CR-39 nuclear detector material on its chemical structure was studied. All samples at room temperature using a 241Am-Be neutron source with a flux of 5^10 neutrons.cm-2.s-1  were neutron-irradiated. In the CR-39 nuclear track detectors, chemical etching is a critical step in expanding latent tracks. At 70 °C, a NaOH in 6.25N etchant was found to be useful in expanding alpha traces in the CR-39 detector. The track depths of the Alpha particle as a function of etching time for the various energies were increased as etching time increases. The current study uses the nuclear track detector technique to estimate the range of alpha particles. Track etch rates are frequently determined using 2-dimensional photographs of track openings (diameter) or etching time data. The chemical structure along latent tracks and the track formation process were investigated in PADC(poly allyl diglycol carbonate). The findings showed that the measurement of bulk etch rate values by the weight method was 1.42 ± 0.02 μm/h. In addition, the results for the alpha particle range from 4.47 ± 0.05 and 5.8 ± 0.19 μm for alpha energy1.2 MeV and1.47MeV,respectivel

    Parameters Affecting Bulk Etch Rate VBfor CR-39 Detector

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    In this work, the dependence of the bulk etches rate VB for CR-39detector on thetemperature T, etching time t and concentration N of the NaOH etchant solution has been studied fordetectors material types PADC. The concentration, etching time, temperatureand other conditions havebeen varied in the ranges (5.25-8.25) N, (1-5) hand (60-80) °C for PADC respectively. In this case, the thickness of material removed by etching ranges from 0.20 to 6.1

    Preliminary Study of Natural Alpha Particle Track Through Solid State Nuclear Track Detector, CR-39.

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    Measurements of alpha particle tracks parameters from 10B(n
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