Properties of ge-doped silica preform by raman spectroscopy

©2006-2015 Asian Research Publishing Network (ARPN).In the present work, the structural modifications of Ge-doped silica preforms due to γ-irradiation at room temperature have been investigated using Raman spectroscopy. The MCVD fabricated preforms labelled as P1 and P2 are distinguishable by the oxidation and thermal history during the fabrication process, in which related to the oxygen bonding of SiO4 tetrahedral. From Raman analysis, the 480 cm-1(D1) and 609 cm-1(D2) peaks are the main network features of pure and doped silica glass, suggest the formation of defect centers in the preforms. The structural modifications of this defects centers are more sensitive in P2, due to the oxygen deficient state of the preform

Properties of ge-doped silica preform by raman spectroscopy

©2006-2015 Asian Research Publishing Network (ARPN).In the present work, the structural modifications of Ge-doped silica preforms due to γ-irradiation at room temperature have been investigated using Raman spectroscopy. The MCVD fabricated preforms labelled as P1 and P2 are distinguishable by the oxidation and thermal history during the fabrication process, in which related to the oxygen bonding of SiO4 tetrahedral. From Raman analysis, the 480 cm-1(D1) and 609 cm-1(D2) peaks are the main network features of pure and doped silica glass, suggest the formation of defect centers in the preforms. The structural modifications of this defects centers are more sensitive in P2, due to the oxygen deficient state of the preform