The two-dimensional Godunov scheme and what it means for macroscopic pedestrian flow models

An efficient simulation method for two-dimensional continuum pedestrian flow models is introduced. It is a two-dimensional and multi-class extension of the Go-dunov scheme for one-dimensional road traffic flow models introduced in the mid 1990’s. The method can be applied to continuum pedestrian flow models in a wide range of applications from the design of train stations and other travel hubs to the study of crowd behaviour and safety at religious and cultural events. The combination of the efficient simulation method with continuum models enables the user to get simulation results much quicker than before. This opens doors to real time crowd control and to more advanced optimisation of planning and control.Transport and PlanningCivil Engineering and Geoscience

Accuracy of pedestrian and traffic flow models: Meaningful quantifications

Transport & PlanningCivil Engineering and Geoscience

Extension of Edie's Definitions for Pedestrian Dynamics

Consistent definitions of important variables in pedestrian flow dynamics are proposed. They are based on the definition of similar variables for road traffic flow from the 1960's by Edie. The definitions are extended to include multi-class flows where pedestrians move in different directions or have different characteristics. The new definitions provide a foundation of already existing crowd flow models and support their further development and the development of better observation methods.Transport & PlanningCivil Engineering and Geoscience

Optimal crowd evacuation

This paper deals with the optimal allocation of routes, destination, and departure times to members of a crowd, for instance in case of an evacuation or another hazardous situation in which the people need to leave the area as quickly as possible. The generic approach minimizes the evacuation times, considering the demand dependent waiting times at bottlenecks within the considered infrastructure. We present the mathematical optimization problem for both the optimal instructions, and the continuum model describing the pedestrian flow dynamics. The key contribution of the approach is that it solves the evacuation problem considering the entire solution space in a continuous manner (i.e. both the time dimension and the routing), implying that for each location and for each time instant the optimal path towards the most favorable exit is calculated, taking into consideration the traffic flow operations along the routes. The approach is generic in the sense that different network loading models can be used, and that a variety of components can be added to the optimization objective without loss of generality. Next to presenting the framework and the mathematical model, we propose an iterative numerical solver to compute the optimal instructions. We demonstrate the abilities and opportunities of this optimization framework with two case studies.Transport & PlanningCivil Engineering and Geoscience

Process competences to incorporate in higher education curricula

This study reports on a survey on project managers' priorities. The survey used ISO 21500 as a scaffold to ask various respondents, like junior, experienced, and senior project managers, project sponsors, and students, to share their perceptions on the priorities for junior project managers. The respondent groups shared similar perceptions. Furthermore, project type and sector had little effect on junior project managers' priorities. Experienced and senior project managers shared their own priorities as well. The perceptions of priorities for junior, experienced, and senior project managers were mostly alike. However, experienced and senior project managers' priorities seemed slightly more affected by project type and sector. A session with experts in project management and teaching project management highlighted that the results for junior project managers could provide accents for introducing project management to students in higher education, provided the entire playing field of project management is also introduced.Design & Construction Managemen

Surface passivation of n -type doped black silicon by atomic-layer-deposited SiO₂/Al₂O₃ stacks

Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.Photovoltaic Materials and DevicesElectrical Sustainable Energ

Passivation Enhancement of Poly-Si Carrier-Selective Contacts by Applying ALD Al_2O_3 Capping Layers

Hydrogenation of polycrystalline silicon (poly-Si) passivating contacts is crucial for maximizing their passivation performance. This work presents the application of Al2O3 prepared by atomic layer deposition as a hydrogenating capping layer. Several important questions related to this application of Al2O3 are addressed by comparing results from Al2O3 single layers, SiNx single layers, and Al2O3/SiNx double layers to different poly-Si types. We investigate the effect of the Al2O3 thickness, the poly-Si thickness, the poly-Si doping type, and the postdeposition annealing treatment on the passivation quality of poly-Si passivating contacts. Especially, the Al2O3/SiNx stack greatly enhances the passivation quality of both n+ and p+ doped as well as intrinsic poly-Si layers. The Al2O3 layer thickness is crucial for the single-layer approach, whereas the Al2O3/SiNx stack is less sensitive to the thickness of the Al2O3 layer. A thicker Al2O3 layer is needed for effectively hydrogenating p+ compared to n+ poly-Si passivating contact. The capping layers can hydrogenate poly-Si layers with thicknesses up to at least 600 nm. The hydrogenation-enhanced passivation for n+ poly-Si is found to be more thermally stable in comparison to p+ poly-Si. These results provide guidelines on the use of Al2O3 capping layers for poly-Si contacts to significantly improve their passivation performance.Photovoltaic Materials and DevicesElectrical Sustainable Energ

Radiomics approach to distinguish between well differentiated liposarcomas and lipomas on MRI

Background: Well differentiated liposarcoma (WDLPS) can be difficult to distinguish from lipoma. Currently, this distinction is made by testing for MDM2 amplification, which requires a biopsy. The aim of this study was to develop a noninvasive method to predict MDM2 amplification status using radiomics features derived from MRI. Methods: Patients with an MDM2-negative lipoma or MDM2-positive WDLPS and a pretreatment T1-weighted MRI scan who were referred to Erasmus MC between 2009 and 2018 were included. When available, other MRI sequences were included in the radiomics analysis. Features describing intensity, shape and texture were extracted from the tumour region. Classification was performed using various machine learning approaches. Evaluation was performed through a 100 times random-split cross-validation. The performance of the models was compared with the performance of three expert radiologists. Results: The data set included 116 tumours (58 patients with lipoma, 58 with WDLPS) and originated from 41 different MRI scanners, resulting in wide heterogeneity in imaging hardware and acquisition protocols. The radiomics model based on T1 imaging features alone resulted in a mean area under the curve (AUC) of 0·83, sensitivity of 0·68 and specificity of 0·84. Adding the T2-weighted imaging features in an explorative analysis improved the model to a mean AUC of 0·89, sensitivity of 0·74 and specificity of 0·88. The three radiologists scored an AUC of 0·74 and 0·72 and 0·61 respectively; a sensitivity of 0·74, 0·91 and 0·64; and a specificity of 0·55, 0·36 and 0·59. Conclusion: Radiomics is a promising, non-invasive method for differentiating between WDLPS and lipoma, outperforming the scores of the radiologists. Further optimization and validation is needed before introduction into clinical practice.ImPhys/Quantitative Imagin

Material properties of LPCVD processed n-type polysilicon passivating contacts and its application in PERPoly industrial bifacial solar cells

We present a detailed material study of n+-type polysilicon (polySi) and its application as a carrier selective rear contact in a bifacial n-type solar cell comprising fire-through screen-printed metallization and 6" Cz wafers. The cells were manufactured with low-cost industrial process steps yielding Vocs from 676 to 683 mV and Jscs above 39.4 mA/cm2 indicating an efficiency potential of 22%. The aim of this study is to understand which material properties determine the performance of POCl3-diffused (n-type) polySi-based passivating contacts and to find routes to improve its use for industrial PERPoly (Passivated Emitter Rear PolySi) cells from the point of view of throughput, performance, and bifacial application. This paper reports on correlations between the parameters used for low pressure chemical vapour deposition (LPCVD), annealing, and doping on optical, structural, and electronic properties of the polySi-based passivating contact and the subsequent influence on the solar cell parameters.Photovoltaic Materials and Device