67 research outputs found
Effect of electron-electron interaction near the metal-insulator transition in doped semiconductors studied within the local density approximation
We report a numerical analysis of Anderson localization in a model of a doped
semiconductor. The model incorporates the disorder arising from the random
spatial distribution of the donor impurities and takes account of the
electron-electron interactions between the carriers using density functional
theory in the local density approximation. Preliminary results suggest that the
model exhibits a metal-insulator transition.Comment: 6 pages, 1 figure; Preprint of an article submitted for consideration
in [International Journal of Modern Physics: Conference Series] \copyright
[2012] [copyright World Scientific Publishing Company]
[http://www.worldscinet.com/ijmpcs.html
Reconciling Conductance Fluctuations and the Scaling Theory of Localization
We reconcile the phenomenon of mesoscopic conductance fluctuations with the
single parameter scaling theory of the Anderson transition. We calculate three
averages of the conductance distribution: , and
where is the conductance in units of and is the resistance
and demonstrate that these quantities obey single parameter scaling laws. We
obtain consistent estimates of the critical exponent from the scaling of all
these quantities
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