Oxygen tri-clusters make glass highly crack-resistant

Identifying key structural factors that surmount their intrinsic brittleness and poor crack initiation resistance (CR) is crucial for designing glass efficiently and predictably. In this study, we present three significant discoveries that contribute to the design of glasses with superior mechanical performances. Firstly, the CR of the aluminosilicate glasses exhibited a drastic increase when the alumina content surpasses a critical threshold. Secondly, the fraction of three-coordinated oxygens (i.e., oxygen tri-cluster fraction [(3)O]) was successfully quantified using our new Nuclear Magnetic Resonance technique. Thirdly, a correlation between the evolution trend of the [(3)O] and the alumina content was established, which aligns closely with the CR trend. These findings suggest that oxygen tri-clusters play a crucial role in significantly enhancing CR in aluminosilicate glasses.</p

Partial Wave Analysis of J/ψ→γ(K+K−π+π−)J/\psi \to \gamma (K^+K^-\pi^+\pi^-)

BES data on $J/\psi \to \gamma (K^+K^-\pi^+\pi^-)$ are presented. The $K^*\bar K^*$ contribution peaks strongly near threshold. It is fitted with a broad $0^{-+}$ resonance with mass $M = 1800 \pm 100$ MeV, width $\Gamma = 500 \pm 200$ MeV. A broad $2^{++}$ resonance peaking at 2020 MeV is also required with width $\sim 500$ MeV. There is further evidence for a $2^{-+}$ component peaking at 2.55 GeV. The non-$K^*\bar K^*$ contribution is close to phase space; it peaks at 2.6 GeV and is very different from $K^{*}\bar{K^{*}}$.Comment: 15 pages, 6 figures, 1 table, Submitted to PL

Search for the Chiral Magnetic Effect in Au+Au collisions at sNN=27\sqrt{s_{_{\rm{NN}}}}=27 GeV with the STAR forward Event Plane Detectors

A decisive experimental test of the Chiral Magnetic Effect (CME) is considered one of the major scientific goals at the Relativistic Heavy-Ion Collider (RHIC) towards understanding the nontrivial topological fluctuations of the Quantum Chromodynamics vacuum. In heavy-ion collisions, the CME is expected to result in a charge separation phenomenon across the reaction plane, whose strength could be strongly energy dependent. The previous CME searches have been focused on top RHIC energy collisions. In this Letter, we present a low energy search for the CME in Au+Au collisions at $\sqrt{s_{_{\rm{NN}}}}=27$ GeV. We measure elliptic flow scaled charge-dependent correlators relative to the event planes that are defined at both mid-rapidity $|\eta|<1.0$ and at forward rapidity $2.1 < |\eta|<5.1$. We compare the results based on the directed flow plane ($\Psi_1$) at forward rapidity and the elliptic flow plane ($\Psi_2$) at both central and forward rapidity. The CME scenario is expected to result in a larger correlation relative to $\Psi_1$ than to $\Psi_2$, while a flow driven background scenario would lead to a consistent result for both event planes[1,2]. In 10-50\% centrality, results using three different event planes are found to be consistent within experimental uncertainties, suggesting a flow driven background scenario dominating the measurement. We obtain an upper limit on the deviation from a flow driven background scenario at the 95\% confidence level. This work opens up a possible road map towards future CME search with the high statistics data from the RHIC Beam Energy Scan Phase-II.Comment: main: 8 pages, 5 figures; supplementary material: 2 pages, 1 figur

Control of multiple bandgap shifts in InGaAs-AlInGaAs multiple-quantum-well material using different thicknesses of PECVD SiO2 protection layers

A useful development of the sputtered SiO/sub 2/ intermixing technique is reported, which uses a single stage of sputtered SiO/sub 2/ deposition and annealing to achieve precise tuning of the bandgap energy in the InGaAs-AlInGaAs material system. The blue shift of photoluminescence spectra can be varied in the range of 0-160 nm. Bandgap-tuned lasers were integrated on a single chip using this technique to assess the post-processed material characteristics and demonstrate its application in optoelectronic integration