Eigenmode in a misaligned triangular optical cavity

We derive relationships between various types of small misalignments on a triangular Fabry-Perot cavity and associated geometrical eigenmode changes. We focus on the changes of beam spot positions on cavity mirrors, the beam waist position, and its angle. A comparison of analytical and numerical results shows excellent agreement. The results are applicable to any triangular cavity close to an isosceles triangle, with the lengths of two sides much bigger than the other, consisting of a curved mirror and two flat mirrors yielding a waist equally separated from the two flat mirrors. This cavity shape is most commonly used in laser interferometry. The analysis presented here can easily be extended to more generic cavity shapes. The geometrical analysis not only serves as a method of checking a simulation result, but also gives an intuitive and handy tool to visualize the eigenmode of a misaligned triangular cavity.Comment: 17 pages, 21 figure

First-principles study of phenyl ethylene oligomers as current-switch

We use a self-consistent method to study the distinct current-switch of $2^{'}$-amino-4-ethynylphenyl-4'-ethynylphenyl-5'-nitro-1-benzenethiol, from the first-principles calculations. The numerical results are in accord with the early experiment [Reed et al., Sci. Am. \textbf{282}, 86 (2000)]. To further investigate the transport mechanism, we calculate the switching behavior of p-terphenyl with the rotations of the middle ring as well. We also study the effect of hydrogen atom substituting one ending sulfur atom on the transport and find that the asymmetry of I-V curves appears and the switch effect still lies in both the positive and negative bias range.Comment: 6 pages, 6 figure

Electron paramagnetic centers in donor-doped CaTiO3 single crystals

Electron spin resonance signals observed in donor-doped CaTiO3 single crystals (Ca12xYxTiO3 orCaTi12xNbxO3) were analyzed and the results were discussed from a viewpoint of carrier generation. Severaltypes of signals were observed in insulating samples, and they were tentatively assigned to some acceptorssuch as Al impurity and the defects relating oxygen excess. Two types of signals with sharp and broad features,both of which are assignable to electron-trapped-type centers, were observed in conductive samples. Theorigins of the sharp and broad signals were attributed to electrons tightly trapped on Ti41 ions and electronsloosely localized around donors, respectively, from analysis of angular and temperature dependence of thesignals. The concentrations of the centers for the sharp and broad signals were estimated at ;3 K to be;331018 cm23 in the H2-reduced samples with x51024 and ;331019 cm23 in the as-prepared sampleswith x51022, respectively. Although no obvious correlation between electroconductive behavior and signalintensity was observed for the sharp signals, intensities of the broad signal increased as the electroconductivebehavior turned from metallic to semiconducting below ;25 K. Therefore, it was found that the electronsresponsible for the broad signals convert into conduction electrons when they are thermally released at hightemperatures, and their concentration is high enough to influence the electroconductive behavior

Polarization Induced Switching Effect in Graphene Nanoribbon Edge-Defect Junction

With nonequilibrium Green's function approach combined with density functional theory, we perform an ab initio calculation to investigate transport properties of graphene nanoribbon junctions self-consistently. Tight-binding approximation is applied to model the zigzag graphene nanoribbon (ZGNR) electrodes, and its validity is confirmed by comparison with GAUSSIAN03 PBC calculation of the same system. The origin of abnormal jump points usually appearing in the transmission spectrum is explained with the detailed tight-binding ZGNR band structure. Transport property of an edge defect ZGNR junction is investigated, and the tunable tunneling current can be sensitively controlled by transverse electric fields.Comment: 18 pages, 8 figure

Ab initio study of single molecular transistor modulated by gate-bias

We use a self-consistent method to study the current of the single molecular transistor modulated by the transverse gate-bias in the level of the first-principles calculations. The numerical results show that both the polyacene-dithiol molecules and the fused-ring oligothiophene molecules are the potential high-frequency molecular transistor controlled by the transverse field. The long molecules of the polyacene-dithiol or the fused-ring thiophene are in favor of realizing the gate-bias controlled molecular transistor. The theoretical results suggest the related experiments.Comment: 14 pages, 7 figure

Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3_{3}/SrTi0.99_{0.99}Nb0.01_{0.01}O3_{3}

Transport properties have been studied for a perovskite heterojunction consisting of SrRuO$_{3}$ (SRO) film epitaxially grown on SrTi$_{0.99}$Nb$_{0.01}$O$_{3}$ (Nb:STO) substrate. The SRO/Nb:STO interface exhibits rectifying current-voltage ($I$-$V$) characteristics agreeing with those of a Schottky junction composed of a deep work-function metal (SRO) and an $n$-type semiconductor (Nb:STO). A hysteresis appears in the $I$-$V$ characteristics, where high resistance and low resistance states are induced by reverse and forward bias stresses, respectively. The resistance switching is also triggered by applying short voltage pulses of 1 $\mu$s - 10 ms duration.Comment: 3 pages, 3 figures, Appl. Phys. Lett., in pres