Eigenmode in a misaligned triangular optical cavity

We derive relationships between various types of small misalignments on a triangular Fabry-Perot cavity and associated geometrical eigenmode changes. We focus on the changes of beam spot positions on cavity mirrors, the beam waist position, and its angle. A comparison of analytical and numerical results shows excellent agreement. The results are applicable to any triangular cavity close to an isosceles triangle, with the lengths of two sides much bigger than the other, consisting of a curved mirror and two flat mirrors yielding a waist equally separated from the two flat mirrors. This cavity shape is most commonly used in laser interferometry. The analysis presented here can easily be extended to more generic cavity shapes. The geometrical analysis not only serves as a method of checking a simulation result, but also gives an intuitive and handy tool to visualize the eigenmode of a misaligned triangular cavity.Comment: 17 pages, 21 figure

Preparation of delafossite CuFeO2 thin films by rf-sputtering on conventional glass substrate

CuFeO2 CuFeO2 is a delafossite-type compound and is a well known p-type semiconductor. The growth of delafossite CuFeO2 thin films on conventional glass substrate by radio-frequency sputtering is reported. The deposition, performed at room temperature leads to an amorphous phase with extremely low roughness and high density. The films consisted of a well crystallized delafossite CuFeO2 after heat treatment at 450 °C in inert atmosphere. The electrical conductivity of the film was 1 mS/cm. The direct optical band gap was estimated to be 2 eV

Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3_{3}/SrTi0.99_{0.99}Nb0.01_{0.01}O3_{3}

Transport properties have been studied for a perovskite heterojunction consisting of SrRuO$_{3}$ (SRO) film epitaxially grown on SrTi$_{0.99}$Nb$_{0.01}$O$_{3}$ (Nb:STO) substrate. The SRO/Nb:STO interface exhibits rectifying current-voltage ($I$-$V$) characteristics agreeing with those of a Schottky junction composed of a deep work-function metal (SRO) and an $n$-type semiconductor (Nb:STO). A hysteresis appears in the $I$-$V$ characteristics, where high resistance and low resistance states are induced by reverse and forward bias stresses, respectively. The resistance switching is also triggered by applying short voltage pulses of 1 $\mu$s - 10 ms duration.Comment: 3 pages, 3 figures, Appl. Phys. Lett., in pres

The Experimental plan of the 4m Resonant Sideband Extraction Prototype for The LCGT

The 4m Resonant Sideband Extraction (RSE) interferometer is a planned prototype of the LCGT interferometer. The aim of the experiment is to operate a powerrecycled Broadband RSE interferometer with suspended optics and to achieve diagonalization of length signals of the central part of the interferometer directly through the optical setup. Details of the 4m RSE interferometer control method as well as the design of the experimental setup will be presented

Ab initio study of single molecular transistor modulated by gate-bias

We use a self-consistent method to study the current of the single molecular transistor modulated by the transverse gate-bias in the level of the first-principles calculations. The numerical results show that both the polyacene-dithiol molecules and the fused-ring oligothiophene molecules are the potential high-frequency molecular transistor controlled by the transverse field. The long molecules of the polyacene-dithiol or the fused-ring thiophene are in favor of realizing the gate-bias controlled molecular transistor. The theoretical results suggest the related experiments.Comment: 14 pages, 7 figure

Molecular dynamics simulation of observed c(4x4) and c(4x3) C60 alignments on the Si(100) reconstructed surface.

We have implemented a large-scale classical molecular dynamics simulation at constant temperature to provide a theoretical insight into the results of a recently performed experiment on the monolayer and multi-layer formations of molecular films on the Si(100) reconstructed dimerized surface. Our simulation has successfully reproduced all of the morphologies observed on the monolayer film by this experiment. We have obtained the formation of both c(4 4) and c(4 3) structures of the molecules and have also obtained phase transitions of the former into the latter