Evolution of ferromagnetic circular dichroism coincident with magnetization and anomalous Hall effect in Co-doped rutile TiO2

Magnetic circular dichroism (MCD) of rutile Ti1-xCoxO2-d is systematically examined with various x and d to reveal a phase diagram for the appearance of ferromagnetism at higher carrier concentration and Co content. The phase diagram exactly matches with that determined from anomalous Hall effect (AHE). The magnetic field dependence of MCD also shows good coincidence with those of the magnetization and AHE. The coincidence of these independent measurements strongly suggests single and intrinsic ferromagnetic origin.Comment: 9 pages, 4 figure

Fast Compact Laser Shutter Using a Direct Current Motor and 3D Printing

We present a mechanical laser shutter design that utilizes a DC electric motor to rotate a blade which blocks and unblocks a light beam. The blade and the main body of the shutter are modeled with computer aided design (CAD) and are produced by 3D printing. Rubber flaps are used to limit the blade's range of motion, reducing vibrations and preventing undesirable blade oscillations. At its nominal operating voltage, the shutter achieves a switching speed of (1.22 $\pm$ 0.02) m/s with 1 ms activation delay and 10 $\mu$s jitter in its timing performance. The shutter design is simple, easy to replicate, and highly reliable, showing no failure or degradation in performance over more than $10^8$ cycles.Comment: 4 pages, 6 figures; supplementary materials for shutter replication added under "Ancillary files

Spectrum of Background X-rays from Moduli Dark Matter

We examine the $X$-ray spectrum from the decay of the dark-matter moduli with mass $\sim {\cal O}(100)$keV, in particular, paying attention to the line spectrum from the moduli trapped in the halo of our galaxy. It is found that with the energy resolution of the current experiments ($\sim 10$%) the line intensity is about twice stronger than that of the continuum spectrum from the moduli that spread in the whole universe. Therefore, in the future experiments with higher energy resolutions it may be possible to detect such line photons. We also investigate the $\gamma$-ray spectrum emitted from the decay of the multi-GeV moduli. It is shown that the emitted photons may form MeV-bump in the $\gamma$-ray spectrum. We also find that if the modulus mass is of the order of 10 GeV, the emitted photons at the peak of the continuum spectrum loses their energy by the scattering and the shape of the spectrum is significantly changed, which makes the constraint weaker than that obtained in the previous works.Comment: 14 pages (RevTeX file) including four postscript figures, reviced version to be published in Physical Review

^{115}In-NQR evidence for unconventional superconductivity in CeIn_3 under pressure

We report evidence for unconventional superconductivity in CeIn_3 at a pressure P = 2.65 GPa above critical pressure (P_c ~ 2.5 GPa) revealed by the measurements of nuclear-spin-lattice-relaxation time (T_1) and ac-susceptibility (ac-chi). Both the measurements of T_1 and ac-chi have pointed to a superconducting transition at T_c = 95 mK, which is much lower than an onset temperature T_{onset} = 0.15 K at zero resistance. The temperature dependence of 1/T_1 shows no coherence peak just below T_c, indicative of an unconventional nature for the superconductivity induced in CeIn_3.Comment: 4 pages, 4 figures, to be published in Phys.Rev.

Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator

A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect(FE) mobility is 0.1cm2/Vs and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2K shows a thermal-activation-type behavior with an activation energy of 0.6eV

Hole Transport in p-Type ZnO

A two-band model involving the A- and B-valence bands was adopted to analyze the temperature dependent Hall effect measured on N-doped \textit{p}-type ZnO. The hole transport characteristics (mobilities, and effective Hall factor) are calculated using the ``relaxation time approximation'' as a function of temperature. It is shown that the lattice scattering by the acoustic deformation potential is dominant. In the calculation of the scattering rate for ionized impurity mechanism, the activation energy of 100 or 170 meV is used at different compensation ratios between donor and acceptor concentrations. The theoretical Hall mobility at acceptor concentration of $7 \times 10^{18}$ cm$^3$ is about 70 cm$^2$V$^{-1}$s$^{-1}$ with the activation energy of 100 meV and the compensation ratio of 0.8 at 300 K. We also found that the compensation ratios conspicuously affected the Hall mobilities.Comment: 5page, 5 figures, accepted for publication in Jpn. J. Appl. Phy