5 research outputs found
In-situ growth of superconducting NdFeAs(O,F) thin films by Molecular Beam Epitaxy
The recently discovered high temperature superconductor F-doped LaFeAsO and
related compounds represent a new class of superconductors with the highest
transition temperature (Tc) apart from the cuprates. The studies ongoing
worldwide are revealing that these Fe-based superconductors are forming a
unique class of materials that are interesting from the viewpoint of
applications. To exploit the high potential of the Fe-based superconductors for
device applications, it is indispensable to establish a process that enables
the growth of high quality thin films. Efforts of thin film preparation started
soon after the discovery of Fe-based superconductors, but none of the earlier
attempts had succeeded in an in-situ growth of a superconducting film of
LnFeAs(O,F) (Ln=lanthanide), which exhibits the highest Tc to date among the
Fe-based superconductors. Here, we report on the successful growth of
NdFeAs(O,F) thin films on GaAs substrates, which showed well-defined
superconducting transitions up to 48 K without the need of an ex-situ heat
treatment
Analysis of interdiffusion between SmFeAsO0.92F0.08 and metals for ex situ fabrication of superconducting wire
We demonstrate the fabrication of superconducting SmFeAsO1-xFx (Sm-1111)
wires by using the ex-situ powder-in-tube technique. Sm-1111 powder and a
binder composed of SmF3, samarium arsenide, and iron arsenide were used to
synthesize the superconducting core. Although the F content of Sm-1111 is
reduced in the process of ex-situ fabrication, the binder compensates by
sufficiently supplementing the F content, thereby preventing a decrease in the
superconducting transition temperature and a shrinking of the superconducting
volume fraction. Thus, in the superconducting Sm-1111 wire with the binder, the
transport critical current density reaches the highest value of ~4000 A/cm2 at
4.2 K
DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2 epitaxial films
DC superconducting quantum interference devices (dc-SQUIDs) were fabricated
in Co-doped BaFe2As2 epitaxial films on (La, Sr)(Al, Ta)O3 bicrystal substrates
with 30deg misorientation angles. The 18 x 8 micro-meter^2 SQUID loop with an
estimated inductance of 13 pH contained two 3 micro-meter wide grain boundary
junctions. The voltage-flux characteristics clearly exhibited periodic
modulations with deltaV = 1.4 micro-volt at 14 K, while the intrinsic flux
noise of dc-SQUIDs was 7.8 x 10^-5 fai0/Hz^1/2 above 20 Hz. The rather high
flux noise is mainly attributed to the small voltage modulation depth which
results from the superconductor-normal metal-superconductor junction nature of
the bicrystal grain boundary