In-situ growth of superconducting NdFeAs(O,F) thin films by Molecular Beam Epitaxy

The recently discovered high temperature superconductor F-doped LaFeAsO and related compounds represent a new class of superconductors with the highest transition temperature (Tc) apart from the cuprates. The studies ongoing worldwide are revealing that these Fe-based superconductors are forming a unique class of materials that are interesting from the viewpoint of applications. To exploit the high potential of the Fe-based superconductors for device applications, it is indispensable to establish a process that enables the growth of high quality thin films. Efforts of thin film preparation started soon after the discovery of Fe-based superconductors, but none of the earlier attempts had succeeded in an in-situ growth of a superconducting film of LnFeAs(O,F) (Ln=lanthanide), which exhibits the highest Tc to date among the Fe-based superconductors. Here, we report on the successful growth of NdFeAs(O,F) thin films on GaAs substrates, which showed well-defined superconducting transitions up to 48 K without the need of an ex-situ heat treatment

Analysis of interdiffusion between SmFeAsO0.92F0.08 and metals for ex situ fabrication of superconducting wire

We demonstrate the fabrication of superconducting SmFeAsO1-xFx (Sm-1111) wires by using the ex-situ powder-in-tube technique. Sm-1111 powder and a binder composed of SmF3, samarium arsenide, and iron arsenide were used to synthesize the superconducting core. Although the F content of Sm-1111 is reduced in the process of ex-situ fabrication, the binder compensates by sufficiently supplementing the F content, thereby preventing a decrease in the superconducting transition temperature and a shrinking of the superconducting volume fraction. Thus, in the superconducting Sm-1111 wire with the binder, the transport critical current density reaches the highest value of ~4000 A/cm2 at 4.2 K

DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2 epitaxial films

DC superconducting quantum interference devices (dc-SQUIDs) were fabricated in Co-doped BaFe2As2 epitaxial films on (La, Sr)(Al, Ta)O3 bicrystal substrates with 30deg misorientation angles. The 18 x 8 micro-meter^2 SQUID loop with an estimated inductance of 13 pH contained two 3 micro-meter wide grain boundary junctions. The voltage-flux characteristics clearly exhibited periodic modulations with deltaV = 1.4 micro-volt at 14 K, while the intrinsic flux noise of dc-SQUIDs was 7.8 x 10^-5 fai0/Hz^1/2 above 20 Hz. The rather high flux noise is mainly attributed to the small voltage modulation depth which results from the superconductor-normal metal-superconductor junction nature of the bicrystal grain boundary