117 research outputs found

    Finite temperature behavior of impurity doped Lithium cluster {\em viz} Li6_6Sn

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    We have carried out extensive isokinetic {\it ab initio} molecular dynamic simulations to investigate the finite temperature properties of the impurity doped cluster Li6_6Sn along with the host cluster Li7_7. The data obtained from about 20 temperatures and total simulation time of at least 3 ns is used to extract thermodynamical quantities like canonical specific heat. We observe a substantial charge transfer from all Li atoms to Sn which inturn weakens the Li-Li bonds in Li6_6Sn compared to the bonds in Li7_7. This weakening of bonds changes the finite temperature behavior of Li6_6Sn significantly. Firstly, Li6_6Sn becomes liquid-like around 250 K, a much lower temperature than that of Li7_7 (≈\approx~425 K). Secondly, an additional quasirotational motion of lithium atoms appears at lower temperatures giving rise to a shoulder around 50 K in the specific heat curve of Li6_6Sn. The peak in the specific heat of Li7_7 is very broad and the specific heat does not show any premelting features.Comment: 16 pages, 10 figures Submitted to J. Chem. Phy

    Finite Temperature Behavior of Small Silicon and Tin Clusters: An Ab Initio Molecular Dynamics Study

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    The finite temperature behavior of small Silicon (Si10_{10}, Si15_{15}, and Si20_{20}) and Tin (Sn10_{10} and Sn20_{20}) clusters is studied using isokinetic Born-Oppenheimer molecular dynamics. The lowest equilibrium structures of all the clusters are built upon a highly stable tricapped trigonal prism unit which is seen to play a crucial role in the finite temperature behavior of these clusters. Thermodynamics of small tin clusters (Sn10_{10} and Sn20_{20}) is revisited in light of the recent experiments on tin clusters of sizes 18-21 [G. A. Breaux et. al. Phys. Rev. B {\bf 71} 073410 (2005)]. We have calculated heat capacities using multiple histogram technique for Si10_{10}, Sn10_{10} and Si15_{15} clusters. Our calculated specific heat curves have a main peak around 2300 K and 2200 K for Si10_{10} and Sn10_{10} clusters respectively. However, various other melting indicators such as root mean square bond length fluctuations, mean square displacements show that diffusive motion of atoms within the cluster begins around 650 K. The finite temperature behavior of Si10_{10} and Sn10_{10} is dominated by isomerization and it is rather difficult to discern the temperature range for transition region. On the other hand, Si15_{15} does show a liquid like behavior over a short temperature range followed by the fragmentation observed around 1800 K. Finite temperature behavior of Si20_{20} and Sn20_{20} show that these clusters do not melt but fragment around 1200 K and 650 K respectively.Comment: 9 figure

    Magic Melters' Have Geometrical Origin

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    Recent experimental reports bring out extreme size sensitivity in the heat capacities of Gallium and Aluminum clusters. In the present work we report results of our extensive {\it ab initio} molecular dynamical simulations on Ga30_{30} and Ga31_{31}, the pair which has shown rather dramatic size sensitivity. We trace the origin of this size sensitive heat capacities to the relative order in their respective ground state geometries. Such an effect of nature of the ground state on the characteristics of heat capacities is also seen in case of small Gallium and Sodium clusters indicating that the observed size sensitivity is a generic feature of small clusters.Comment: 4 pages, 6 figure

    Dopant Induced Stabilization of Silicon Cluster at Finite Temperature

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    With the advances in miniaturization, understanding and controlling properties of significant technological systems like silicon in nano regime assumes considerable importance. It turns out that small silicon clusters in the size range of 15-20 atoms are unstable upon heating and in fact fragment in the temperature range of 1200 K to 1500 K. In the present work we demonstrate that it is possible to stabilize such clusters by introducing appropriate dopant (in this case Ti). Specifically, by using the first principle density functional simulations we show that Ti doped Si16_{16}, having the Frank-Kasper geometry, remains stable till 2200 K and fragments only above 2600 K. The observed melting transition is a two step process. The first step is initiated by the surface melting around 600 K. The second step is the destruction of the cage which occurs around 2250 K giving rise to a peak in the heat capacity curve.Comment: 6 pages, 8 Figs. Submitted to PR

    Clinical profile and prognosis of patients with posterior circulation stroke

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    Background: Posterior circulation stroke is less common than stroke involving the anterior circulation. An understanding of the Posterior circulation stroke phenomenology and mechanisms requires knowledge of neurovascular anatomy and of the structure-function relationships of this region of the brain. Identifying mechanisms of stroke is essential so that appropriate preventive therapies may be instituted.Methods: A prospective study was conducted over a period of 1 year after obtaining permission from institutional ethics committee. Recently diagnosed cases of posterior circulation stroke from medicine and neurology wards were enrolled, who fulfilled inclusion criteria.Results: Most common age for posterior circulation stroke in this study was 41-70 years of age with median age of 56.5 years. It is more common in males (55%) than females (45%). Ischemic posterior circulation stroke is more common (63.15%) than haemorrhagic posterior circulation stroke (36.85%). Most common presenting feature of posterior circulation was ataxia (77.3%). Most common risk factor for posterior circulation stroke was hypertension (60.5%) followed by dyslipidemia (55.26%). Most common site of involvement in ischemic posterior circulation stroke was cerebellum (37.5%) followed by occipital lobe (24%). Commonest site of bleed found was cerebellum (64.4%) followed by pons (35.6%). Mortality in posterior circulation stroke in present study was 15.78%.Conclusions: Posterior circulation stroke present with a wide variety of symptoms. Episodes are often staggering and more protracted than those of anterior circulation stroke. Further studies are needed to determine the safest and most effective treatment modalities for the various types of posterior circulation stroke
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