Electronic Properties of Charged Centers in Si0₂-like Glasses

Contains report on one research project.Joint Services Electronics Program (Contract DAAG29-78-C-0020

Electronic Properties of Amorphous Silicon Dioxide

Contains report on one research project.Joint Services Electronics Program (Contract DAAG29-80-C-0104

Electronic Properties of Charged Centers in SiO₂-like Glasses

Contains a summary of research.Joint Services Electronics Program (Contract DAAB07-76-C-1400

Electronic Properties of Intrinsic Defects in Amorphous Silicon Dioxide

Contains report on one research project.Joint Services Electronics Program (Contract DAAG29-78-C-0020)Joint Services Electronics Program (Contract DAAG29-80-C-0104

Ultralow Temperature Studies of Electronic Conduction in Submicron Silicon Inversion Layers

Contains research summary.Joint Services Electronics Program (Contract DAALO3-86-K-0002

Single Electron Transistors

Contains description of one research project and a list of publications.Joint Services Electronics Program Contract DAAL03-92-C-0001National Science Foundation Grant ECS 88-13250National Science Foundation Grant ECS 92-0342

Electric-field driven insulating to conducting transition in a mesoscopic quantum dot lattice

We investigate electron transport through a finite two dimensional mesoscopic periodic potential, consisting of an array of lateral quantum dots with electron density controlled by a global top gate. We observe a transition from an insulating state at low bias voltages to a conducting state at high bias voltages. The insulating state shows simply activated temperature dependence, with strongly gate voltage dependent activation energy. At low temperatures the transition between the insulating and conducting states becomes very abrupt and shows strong hysteresis. The high-bias behavior suggests underdamped transport through a periodic washboard potential resulting from collective motion.Comment: 4 pages, 4 figure

Electronic transport in films of colloidal CdSe nanocrystals

We present results for electronic transport measurements on large three-dimensional arrays of CdSe nanocrystals. In response to a step in the applied voltage, we observe a power-law decay of the current over five orders of magnitude in time. Furthermore, we observe no steady-state dark current for fields up to 10^6 V/cm and times as long as 2x10^4 seconds. Although the power-law form of the decay is quite general, there are quantitative variations with temperature, applied field, sample history, and the material parameters of the array. Despite evidence that the charge injected into the film during the measurement causes the decay of current, we find field-scaling of the current at all times. The observation of extremely long-lived current transients suggests the importance of long-range Coulomb interactions between charges on different nanocrystals.Comment: 11 pages, 10 figure

Multi-island single-electron devices from self-assembled colloidal nanocrystal chains

We report the fabrication of multi-island single-electron devices made by lithographic contacting of self-assembled alkanethiol-coated gold nanocrystals. The advantages of this method, which bridges the dimensional gap between lithographic and NC sizes, are (1) that all tunnel junctions are defined by self-assembly rather than lithography and (2) that the ratio of gate capacitance to total capacitance is high. The rich electronic behavior of a double-island device, measured at 4.2 K, is predicted in detail by combining finite element and Monte Carlo simulations with the standard theory of Coulomb blockade with very few adjustable parameters.Comment: 4 page