Beamtests of the N-on-n Silicon Microstrip Detector with Various P-stop Structures

A Silicon microstrip detector with n-strip readout on the nbulk Silicon has been fabricated by implementing 4 different pstop structures in 6 zones in the detector's n-side. The detectors were assembled into the units of detector-electronics modules. The response difference in the p-stop structures and effect of detector strip length were characterized in the laboratory and under the beamtests with charged pions. I. INTRODUCTION Silicon microstrip detectors are successfully used in the high energy physics experiments [1]. In the future experiments, such as in the Large Hadron Collider (LHC) at CERN, the Silicon microstrip detectors is planned to be a central device for tracking the charged particles in the flash of interactions. The environment for the detector is incomparable to the present experiments: the number of charged and neutral particles generated in the interactions is so large, e.g., a few times 10 14 particles per cm 2 being accumulated over the lifetime of the devic..

Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers

A new approach to monolithic pixel detectors, based on SOI wafers with high resistivity substrate, is being pursued by the CERN RD19 collaboration. This paper reports on the used fabrication methods, and on the results of the electrical evaluation of the SOI - MOSFET devices and of the detector structures fabricated in the bulk. The leakage current of the high-resistivity PIN-diodes was kept in the order of 5 to 10 nA/cm$^2$. The SOI preparation processes considered (SIMOX and ZMR) produced working electronic circuits and appear to be compatible with the fabrication of detectors of suitable quality

INTEGRATION OF CMOS-ELECTRONICS AND PARTICLE DETECTOR DIODES IN HIGH-RESISTIVITY SILICON-ON-INSULATOR WAFERS

A new approach to monolithic pixel detectors, based on SOI wafers with high resistivity substrate, is being pursued by the CERN RD19 collaboration. This paper reports on the used fabrication methods, and on the results of the electrical evaluation of the SOI - MOSFET devices and of the detector structures fabricated in the bulk. The leakage current of the high-resistivity PIN-diodes was kept in the order of 5 to 10 nA/cm2. The SOI preparation processes considered (SIMOX and ZMR) produced working electronic circuits and appear to be compatible with the fabrication of detectors of suitable quality

SCIPP 94/34 October 1994

. We report the results of a beam test using double-sided ACcoupled silicon microstrip detectors with binary readout, i.e., a readout where the signals are discriminated in the front-end electronics and only the hit location as kept. For strip pitch between 50µm and 200µm, we determine the efficiency and the noise background as function of threshold setting. This allows us to reconstruct the Landau pulse height spectrum and determine the signal/noise ratio. In addition, the threshold/noise ratio necessary for operation with low occupancy is determined. I. INTRODUCTION In proposed silicon tracking detectors at future large hadron colliders [1], the front end electronics (FEE) has to be efficient and has to control the noise background in the anticipated large number of channels. One possible choice is the so-called "binary read-out" where the pulse from the silicon detector is amplified and then compared with a threshold, preferably in the same ASIC chip to preserve the matching of th..

Evaluation of P-stop structures in the n-side of n-on-n silicon strip detector

Large area (63.6 mm x 64 mm) n-on-n silicon strip detectors have been fabricated, implementing various p-stop structures in the n-side. The detectors were characterized in laboratory and in beamtests. The beamtests showed that the individual p-stop structure collected less charge in the region between the strips than other p-stop structures. I. INTRODUCTION Large area n-on-n silicon strip detectors were fabricated out of 4-inch silicon wafers. They consisted of n-implant strips in nbulk silicon for the segmented readout and a large p-pad in the backside for the initial p-n junction. The detector was designed to function, in the heavy radiation environment such as LHC, well after the type inversion of the silicon bulk and the large increase of the depletion voltage [1]. Initially and even after the type inversion, the surface of the n-side is known to have n-type characteristics due to the accumulation layer of electrons in the interface of the surface oxide and the bulk. This accumu..