In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron Diffraction and Scanning Tunneling Microscopy

Si and Ge growth on the stripe-patterned Si (001) substrates is studied using in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). During Si buffer growth, the evolution of RHEED patterns reveals a rapid change of the stripe morphology from a multifaceted “U” to a single-faceted “V” geometry with {119} sidewall facets. This allows to control the pattern morphology and to stop Si buffer growth once a well-defined stripe geometry is formed. Subsequent Ge growth on “V”-shaped stripes was performed at two different temperatures of 520 and 600°C. At low temperature of 520°C, pronounced sidewall ripples are formed at a critical coverage of 4.1 monolayers as revealed by the appearance of splitted diffraction streaks in RHEED. At 600°C, the ripple onset is shifted toward higher coverages, and at 5.2 monolayers dome islands are formed at the bottom of the stripes. These observations are in excellent agreement with STM images recorded at different Ge coverages. Therefore, RHEED is an efficient tool for in situ control of the growth process on stripe-patterned substrate templates. The comparison of the results obtained at different temperature reveals the importance of kinetics on the island formation process on patterned substrates

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimension and position of each floating gate are well defined and controlled. The devices exhibit a long retention time and single-electron injection at room temperature

The dynamic cilium in human diseases

Cilia are specialized organelles protruding from the cell surface of almost all mammalian cells. They consist of a basal body, composed of two centrioles, and a protruding body, named the axoneme. Although the basic structure of all cilia is the same, numerous differences emerge in different cell types, suggesting diverse functions. In recent years many studies have elucidated the function of 9+0 primary cilia. The primary cilium acts as an antenna for the cell, and several important pathways such as Hedgehog, Wnt and planar cell polarity (PCP) are transduced through it. Many studies on animal models have revealed that during embryogenesis the primary cilium has an essential role in defining the correct patterning of the body. Cilia are composed of hundreds of proteins and the impairment or dysfunction of one protein alone can cause complete loss of cilia or the formation of abnormal cilia. Mutations in ciliary proteins cause ciliopathies which can affect many organs at different levels of severity and are characterized by a wide spectrum of phenotypes. Ciliary proteins can be mutated in more than one ciliopathy, suggesting an interaction between proteins. To date, little is known about the role of primary cilia in adult life and it is tempting to speculate about their role in the maintenance of adult organs. The state of the art in primary cilia studies reveals a very intricate role. Analysis of cilia-related pathways and of the different clinical phenotypes of ciliopathies helps to shed light on the function of these sophisticated organelles. The aim of this review is to evaluate the recent advances in cilia function and the molecular mechanisms at the basis of their activity

Response to Salinity in Legume Species: An Insight on the Effects of Salt Stress during Seed Germination and Seedling Growth

The process of soil salinization and the preponderance of saline water sources all over the world represent one of the most harmful abiotic stress to plant growth. This pointed to the importance of obtaining plants which are tolerant or resistant to salt, considering that projection of climate change for the coming years indicate an increase in temperature and rain scarcity. In the current study, the effect of NaCl was investigated on germinating seeds of Lathyrus sativus L., Vicia sativa L., Vigna radiata L. R.Wilczek and Vigna unguiculata L. Walp., by combining physiological, biochemical, biostatistical and ultrastructural analyses. Our results revealed that germination was not influenced by high NaCl concentrations, while seedling growth was affected even at low NaCl concentrations, probably due to an alteration in water uptake and in organic matter biosynthesis. Nevertheless, the synthesis of antioxidant enzymes, phenolic acids and flavonoids was registered in all species, which tended to cope with the increasing salt stress, allowing a response mechanism such as cytoplasm detoxification and cellular turgor maintenance. Besides, the ultrastructural analysis evidenced plasmolyzed cells close to cells with a normal ultrastructure with no appreciable differences among the species. This research deeply investigates the mechanism of salt-stress response focusing on species never tested before for their possible tolerance to salinity

Role of the ubiquitin-proteasome pathway and some peptidases during seed germination and copper stress in bean cotyledons

The role of the ubiquitin (Ub)-proteasome pathway and some endo- and aminopeptidases (EPs and APs, respectively) was studied in cotyledons of germinating bean seeds (Phaseolus vulgaris L.). The Ub system appeared to be important both in the early (3 days) and late (9 days) phases of germination. In the presence of copper, an increase in protein carbonylation and a decrease in reduced eSH pool occurred, indicating protein damage. This was associated with an enhancement in accumulation of malondial- dehyde, a major product of lipid peroxidation, and an increase in content of hydrogen peroxide (H2O2), showing oxidative stress generation. Moreover, copper induced inactivation of the Ub-proteasome (EC 3.4.25) pathway and inhibition of leucine and proline aminopeptidase activities (EC 3.4.11.1 and EC 3.4.11.5, respectively), thus limiting their role in modulating essential metabolic processes, such as the removal of regulatory and oxidatively-damaged proteins. By contrast, total trypsin and chymotrypsin- like activities (EC 3.4.21.4 and EC 3.4.21.1, respectively) increased after copper exposure, in parallel with a decrease in their inhibitor capacities (i.e. trypsin inhibitor and chymotrypsin inhibitor activity), suggesting that these endoproteases are part of the protective mechanisms against copper stress

Growth of ultrahigh-density quantum-confined germanium dots on SiO 2 thin films

The spontaneous formation of nanometric and highly dense (similar to 3x10(12) cm(-2)) Ge droplets on thin SiO2 film on Si(001) is investigated by scanning tunneling microscopy and spectroscopy. Ge dots have been grown by depositing Ge on the clean SiO2 surface at room temperature and then annealing the sample at 500 degrees C. Ge dots appear to be free of germanium oxides and characterized by a flat surface with the onset of {113} faceting. I-V curves show that they have an energy gap of approximately 1.8 eV, well above that of bulk Ge. Fabrication of nanometer-sized, highly dense pure Ge droplets is very promising for nanoelectronics applications. (c) 2006 American Institute of Physics

Ge nanocrystals formation on SiO

Ge nanocrystals (NCs) are produced by a dewetting process during annealing of an amorphous Ge layer deposited on an ultra thin SiO2 layer. We have investigated the characteristics of the resulting NCs as a function of the nominal Ge layer thickness. Thanks to transmission electron microscopy images, we have extracted both the wetting angle and the NCs aspect ratio. We found that these characteristics remain constant whatever is the nominal thickness in the range of 1.5 to 10 nm. These results suggest that NCs have reached their equilibrium shape. We also experimentally determined the evolution of the NCs with the nominal thickness of the amorphous layer and found a linear relation. These results are in agreement with mass conservation and energetical considerations. Moreover a memory effect was evidenced in all the samples by C − V measurements. At last, we demonstrate that the use of a patterned SiO2 surface improves considerably the ordering of NCs and reduces their size distribution. Such a process is promising for future integration of NCs in memory devices

Optoelectronic properties in quantum-confined germanium dots

Photocurrent generation of nanometric Ge dots has been investigated by using electrochemical measurements. Photocurrent features have been ascribed, for large Ge dots, to Ge bulk direct electronic transitions at L and X points as evidenced by their close correspondence with the optical absorption coefficient. A blueshift of the photocurrent features has been detected by reducing the Ge dot size. These changes have been interpreted as due to quantum confinement effect. This result suggests that Ge dots could be applied in photovoltaic nanodevices and quantum dot based lasers. (C) 2007 American Institute of Physics