2 research outputs found
Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach
Silicon nanowires fabricated by metal-assisted chemical etching can
present low porosity and a rough surface depending on the doping level
of the original silicon wafer. In this case, wiring of silicon nanowires
may represent a challenging task. We investigated two different
approaches to realize the electrical contacts in order to enable
electrical measurement on a rough silicon nanowire device: we compared
FIB-assisted platinum deposition for the fabrication of electrical
contact with EBL technique