Phenomenon of Cloning and specificity of its usage

Cloning is studied by different branches of science. Medicine is interested in cloning because of its ability to transplant special tissues and organs, genetics - with the purpose of studying heredity and succession, sociology deals with moral and ethic aspects of the phenomenon. The paper is devoted to the study of cloning, its special features and usage in different spheres of social life. The article represents main types of cloning, specificity of vegetative and animal cloning and problems of its expansion. The paper also demonstrates the actual topic of nowadays studies connected with human cloning and its aftereffects for science and society. The article may be useful for a wide audience and for people, who are interested in studies of cloning and problems of its realization

Tailoring of structure formation and phase composition in reactively sputtered zirconium oxide films using nitrogen as an additional reactive gas Post Print Tailoring of structure formation and phase composition in reactively sputtered zirconium oxide fil

The structure of ZrO 2 films has been controlled during reactive sputtering in an argon/oxygen atmosphere by adding an amount of nitrogen gas to the process. Depending on the deposition conditions, amorphous, cubic, or monoclinic films have been obtained without any additional substrate heating. The resulting film structure is explained in terms of the control of fast negative oxygen ions generated at the target surface and accelerated toward the growing film. Furthermore, the nitrogen addition leads to a pronounced stabilization of the plasma discharge and fewer arcing events, while the incorporation of nitrogen atoms in the growing film is very small

Heuristic model of the plasma impedance in magnetron sputtering

Due to the increasing demand on precision, homogeneity, process control and throughput of the reactive magnetron sputtering deposition in large in-line coaters, there have been considerable efforts in theoretical modeling of this process in the past. In the literature promising approaches for (i) the kinetics between sputtered material and reactive gas, (ii) the distribution of sputtered neutral particles as well as (iii) flow kinetics of diluted gas within complex recipient geometries can be found. However, these approaches do not comprise the current-voltage characteristics at the sputter target. This behaviour is shown to strongly depend on secondary electron emission characteristics of the target material as well as on the magnetic field and configuration of anodes. Especially for long targets, the ratio between total discharge current and ring current along sputter erosion tracks has crucial impact on the homogeneity of the sputter process along target direction. In this paper we present a heuristic model which couples external electric parameters of a target operating in DC mode with international quantities such as (i) ion current, (ii) secondary electron emission, (iii) coupling due to ring current and (iv) subsidiary effects such as the anode configuration. With the aid of this model, the current voltage characteristics of reactive sputtering process using materials such as silicon and titanium, which strongly differ in secondary electron emission, are modeled. We present implications of the simultation model on the process behavior, e.g. target homogeneity, deposition rate and film stoichiometry in comparision with experimental findings