Effect of pulsed magnetron sputtering process for the deposition of thin layers of nickel and nickel oxide

Magnetron sputtered nickel and nickel oxide films have been studied for various applications. We may find, among others, these films in electrochromic display devices, in resistive type gas sensors, as metal electrodes in electronic devices, in solar thermal absorbers. Pure nickel films deposited using PVD technique possess good corrosion and wear resistant properties. Magnetron sputtering has several advantages in film deposition (in comparison to other methods) such as relatively low heating temperature of the deposited substrate during sputtering process, high energy of sputtered atoms (about 10 eV) at the substrate, which influences positively the films adhesion. From application point of view, the most valuable feature of these films is the possibility of scaling target dimensions, which makes feasible the deposition on a several square meter surfaces. The improvement of magnetron sputtering devices design may influence positively the optimization of the deposition technology and its efficiency. The thin nickel and nickel oxide films were prepared by pulsed magnetron sputtering using original type WMK magnetron device. Ni (99.9 %) has been used as a sputtering target of 100 mm in diameter and different thicknesses (3 mm, 5 mm, and 6 mm). The distance between the substrate and target was the same in all experiments and equal to 120 mm. Argon and oxygen gases were introduced during the reactive process through needle gas valves at a total pressure of 0.4 Pa. The sputtering power, sputtering pressure and oxygen partial pressure have been used as technological knobs for deposition processes. The helpful tool for controlling the pulsed magnetron sputtering process was the original parameter of supply (so called circulating power). Results from our experiments showed that the deposition of Ni films is possible even from targets of 6 mm thickness. Deposition rate increased proportionally with the sputtering power. The aim of this work is to use the acquired expertise to develop an efficient technology of thin nickel oxide layers for electrochromic systems

Event-related potentials (ERP) and SGIP1 gene polymorphisms in alcoholics: relation to family history of alcoholism and drug usage

Objective The electrophysiological characteristics may serve as valuable biomarkers for the genetic vulnerability underlying alcoholism. The purpose of this study was to evaluate the potential associations between single nucleotide polymorphisms (SNPs) located in the SGIP1 gene and the theta ERP quantitative traits. Method The theta band (4–7 Hz) visual ERP occurring in the P300 response in the resting EEG were examined to explore the electrophysiological effects of alcohol on the brain in five regions: frontal, central, parietal, temporal and occipital in patients with alcohol addiction. In addition, we tested the potential associations between single nucleotide polymorphisms (SNPs) located in the SGIP1 gene and ERP quantitative traits. Results We found that the amplitude of the auditory P300 response differed considerably among groups of alcoholics in the frontal, central and temporal areas of the brain and it was lower in the studied brain regions in alcoholics in comparison to non-alcoholics. However, among subjects in the young adult group (GR-1) there was no statistical difference in amplitude of P300 response with control subjects in all studied brain regions in comparison with non-alcoholics. Moreover, we revealed that SNP rs10889635 had a significant effect on P300 amplitude in the central and temporal regions. The reduced P300 amplitude was in AA carriers in comparison to both carriers of GG and GA alleles. Conclusions The present study demonstrated a possible association of target P300 evoked theta and of alcohol dependence with SNPs from the gene SGIP1 in the region of rs10889635, but further studies are required