33,493 research outputs found
Top-N Recommendation on Graphs
Recommender systems play an increasingly important role in online
applications to help users find what they need or prefer. Collaborative
filtering algorithms that generate predictions by analyzing the user-item
rating matrix perform poorly when the matrix is sparse. To alleviate this
problem, this paper proposes a simple recommendation algorithm that fully
exploits the similarity information among users and items and intrinsic
structural information of the user-item matrix. The proposed method constructs
a new representation which preserves affinity and structure information in the
user-item rating matrix and then performs recommendation task. To capture
proximity information about users and items, two graphs are constructed.
Manifold learning idea is used to constrain the new representation to be smooth
on these graphs, so as to enforce users and item proximities. Our model is
formulated as a convex optimization problem, for which we need to solve the
well-known Sylvester equation only. We carry out extensive empirical
evaluations on six benchmark datasets to show the effectiveness of this
approach.Comment: CIKM 201
Is the Number of Giant Arcs in LCDM Consistent With Observations?
We use high-resolution N-body simulations to study the galaxy-cluster
cross-sections and the abundance of giant arcs in the CDM model.
Clusters are selected from the simulations using the friends-of-friends method,
and their cross-sections for forming giant arcs are analyzed. The background
sources are assumed to follow a uniform ellipticity distribution from 0 to 0.5
and to have an area identical to a circular source with diameter 1\arcsec. We
find that the optical depth scales as the source redshift approximately as
\tau_{1''} = 2.25 \times 10^{-6}/[1+(\zs/3.14)^{-3.42}] (0.6<\zs<7). The
amplitude is about 50% higher for an effective source diameter of 0.5\arcsec.
The optimal lens redshift for giant arcs with the length-to-width ratio ()
larger than 10 increases from 0.3 for \zs=1, to 0.5 for \zs=2, and to
0.7-0.8 for \zs>3. The optical depth is sensitive to the source redshift, in
qualitative agreement with Wambsganss et al. (2004). However, our overall
optical depth appears to be only 10% to 70% of those from previous
studies. The differences can be mostly explained by different power spectrum
normalizations () used and different ways of determining the
ratio. Finite source size and ellipticity have modest effects on the optical
depth. We also found that the number of highly magnified (with magnification
) and ``undistorted'' images (with ) is comparable to the
number of giant arcs with and . We conclude that our
predicted rate of giant arcs may be lower than the observed rate, although the
precise `discrepancy' is still unclear due to uncertainties both in theory and
observations.Comment: Revised version after the referee's reports (32 pages,13figures). The
paper has been significantly revised with many additions. The new version
includes more detailed comparisons with previous studies, including the
effects of source size and ellipticity. New discussions about the redshift
distribution of lensing clusters and the width of giant arcs have been adde
Extracting CP violation and strong phase in D decays by using quantum correlations in psi(3770)-> D0\bar{D}0 -> (V1V2)(V3V4) and psi(3770)->D0\bar{D}0 -> (V1V2)(K pi)
The charm quark offers interesting opportunities to cross-check the mechanism
of CP violation precisely tested in the strange and beauty sectors. In this
paper, we exploit the angular and quantum correlations in the D\bar{D} pairs
produced through the decay of the psi(3770) resonance in a charm factory to
investigate CP-violation in two different ways. We build CP-violating
observables in psi(3770) -> D\bar{D} -> (V_1V_2)(V_3 V_4) to isolate specific
New Physics effects in the charm sector. We also consider the case of psi(3770)
-> D\bar{D} -> (V_1V_2)(K\pi) decays, which provide a new way to measure the
strong phase difference delta between Cabibbo-favored and doubly-Cabibbo
suppressed D decays required in the determination of the CKM angle gamma.
Neglecting the systematics, we give a first rough estimate of the sensitivities
of these measurements at BES-III with an integrated luminosity of 20 fb^-1 at
psi(3770) peak and at a future Super tau-charm factory with a luminosity of
10^35 cm^-2.s^-1.Comment: 13 pages
Two-dimensional structures of ferroelectric domain inversion in LiNbO3 by direct electron beam lithography
We report on the fabrication of domain-reversed structures in LiNbO3 by means
of direct electron beam lithography at room temperature without any static
bias. The LiNbO3 crystals were chemically etched after the exposure of electron
beam and then, the patterns of domain inversion were characterized by atomic
force microscopy (AFM). In our experiment, an interesting phenomenon occurred
when the electron beam wrote a one-dimensional (1-D) grating on the negative
c-face: a two-dimensional (2-D) dotted array was observed on the positive c-
face, which is significant for its potential to produce 2-D and
three-dimensional photonic crystals. Furthermore, we also obtained 2-D
ferroelectric domain inversion in the whole LiNbO3 crystal by writing the 2-D
square pattern on the negative c-face. Such a structure may be utilized to
fabricate 2-D nonlinear photonic crystal. AFM demonstrates that a 2-D
domain-reversed structure has been achieved not only on the negative c-face of
the crystal, but also across the whole thickness of the crystal.Comment: 17 pages, 4 figure
Adsorption/desorption and electrically controlled flipping of ammonia molecules on graphene
In this paper, we evaluate of the adsorption/ desorption of ammonia molecules
on a graphene surface by studying the Fermi level shift. Based on a physically
plausible model, the adsorption and desorption rates of ammonia molecules on
graphene have been extracted from the measured Fermi level shift as a function
of exposure time. An electric field-induced flipping behavior of ammonia
molecules on graphene is suggested, based on field effect transistor (FET)
measurements
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