46 research outputs found

    New approaches in optical lithography technology for subwavelength resolution

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    Advances in the semiconductor industry are mainly driven by improvements in optical lithography technology, which have enabled the continual shrinking of integrated circuit devices. However, optical lithography technology is approaching its limit, and within ten years, it may be substituted by new non-optical approaches. These may include Extreme Ultra Violet (EUV) lithography and charged particle beam projection lithography. While these technologies may have potentially better resolution, they can be very difficult to implement into manufacturing. During the course of the research presented here, the extension of optical lithography to sub 70nm resolution has been investigated. Since optical lithography is mature and well understood, extending it to allow for higher resolution can dramatically reduce manufacturing difficulties, compared to EUV or charged particle beam projection lithography. A majority of the existing infrastructure, such as photoresist materials, sources, optics, and photo-masks, remain applicable with the optical methods explored here. The avenues investigated in this research have concentrated on spatial frequency filtering in alternative Fourier Transform planes, vacuum UV wavelength lithography, and achieving ultra high numerical aperture imaging through the use of liquid immersion imaging. More specifically, novel spatial frequency filtering using angular transmission filters was developed and demonstrated. Multiple filter designs were proposed, one of which was successfully fabricated and implemented for lithographic imaging. Spatial filtering, using angular transmission filtering, proved to enhance the resolution of contact hole images by approximately 20%. Vacuum UV imaging at the 126nm wavelength was carried out but deemed likely to be less practical for commercial viability due to source, optics, and materials issues. Immersion lithography, using the 193nm wavelength ArF excimer laser, was investigated and demonstrated for very high numerical aperture imaging. Requirements for immersion lithography were established, including the necessary design of imaging fluids, optics, sources, and photoresist materials. As a development tool, an interference lithography system was built using the 193nm ArF excimer laser and water as an immersion fluid. Patterns below 70nm were printed using the process developed, which has established the potential to extend optical lithography further than was believed at the onset of this project. This research provides proof of the concept of extending optical lithography to the 70nm generation and below

    Ghostly Stellar Halos in Dwarf Galaxies

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    Our study aims at probing the typical masses of the smallest and faintest galaxies that have ever formed in the universe. We carry out numerical simulations to characterize the size, stellar mass, and stellar mass surface density of stellar halos as a function of dark matter halo mass and a parameter that dictates the amount of stellar mass. We expect that for galaxies smaller than a critical value, these ghostly halos will not exist because the smaller galactic subunits that build it up, do not form any stars. Our results indicate the introduced parameter dominates the behaviors of stellar halos over dark matter mass. This indicates finding the appropriate parameter value is crucial to characterize these halos. We also find redshift contributes to the behavior of stellar mass but has no significant impact on the size of stellar halos

    Water Immersion Optical Lithography for the 45nm Node

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    It is possible to extend optical lithography by using immersion imaging methods. Historically, the application of immersion optics to microlithography has not been seriously pursued because of the alternative solutions available. As the challenges of shorter wavelength become increasingly difficult, immersion imaging becomes more feasible. We present results from research into 193nm excimer laser immersion lithography at extreme propagation angles (such as those produces with strong OAI and PSM). This is being carried out in a fluid that is most compatible in a manufacturable process, namely water. By designing a system around the optical properties of water, we are able to image with wavelengths down to 193nm. Measured absorption is below 0.50 cm at 185nm and below 0.05 cm\u27 at 193nm. Furthermore, through the development of oblique angle imaging, numerical apertures approaching 1.0 in air and 1.44 in water are feasible. The refractive index of water at 193nm (1.44) allows for exploration of the following: 1. k1 values approaching 0. 17 and optical lithography approaching 35nm. 2. Polarization effects at oblique angles (extreme NA). 3. Immersion and photoresist interactions with polarization. 4. Immersion fluid composition, temperature, flow, and micro-bubble influence on optical properties (index, absorption, aberration, birefringence). 5. Mechanical requirements for imaging, scanning, and wafer transport in a water media. 6. Synthesizing conventional projection imaging via interferometric imaging

    Shuffle & Divide: Contrastive Learning for Long Text

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    We propose a self-supervised learning method for long text documents based on contrastive learning. A key to our method is Shuffle and Divide (SaD), a simple text augmentation algorithm that sets up a pretext task required for contrastive updates to BERT-based document embedding. SaD splits a document into two sub-documents containing randomly shuffled words in the entire documents. The sub-documents are considered positive examples, leaving all other documents in the corpus as negatives. After SaD, we repeat the contrastive update and clustering phases until convergence. It is naturally a time-consuming, cumbersome task to label text documents, and our method can help alleviate human efforts, which are most expensive resources in AI. We have empirically evaluated our method by performing unsupervised text classification on the 20 Newsgroups, Reuters-21578, BBC, and BBCSport datasets. In particular, our method pushes the current state-of-the-art, SS-SB-MT, on 20 Newsgroups by 20.94% in accuracy. We also achieve the state-of-the-art performance on Reuters-21578 and exceptionally-high accuracy performances (over 95%) for unsupervised classification on the BBC and BBCSport datasets.Comment: Accepted at ICPR 202

    ContraCluster: Learning to Classify without Labels by Contrastive Self-Supervision and Prototype-Based Semi-Supervision

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    The recent advances in representation learning inspire us to take on the challenging problem of unsupervised image classification tasks in a principled way. We propose ContraCluster, an unsupervised image classification method that combines clustering with the power of contrastive self-supervised learning. ContraCluster consists of three stages: (1) contrastive self-supervised pre-training (CPT), (2) contrastive prototype sampling (CPS), and (3) prototype-based semi-supervised fine-tuning (PB-SFT). CPS can select highly accurate, categorically prototypical images in an embedding space learned by contrastive learning. We use sampled prototypes as noisy labeled data to perform semi-supervised fine-tuning (PB-SFT), leveraging small prototypes and large unlabeled data to further enhance the accuracy. We demonstrate empirically that ContraCluster achieves new state-of-the-art results for standard benchmark datasets including CIFAR-10, STL-10, and ImageNet-10. For example, ContraCluster achieves about 90.8% accuracy for CIFAR-10, which outperforms DAC (52.2%), IIC (61.7%), and SCAN (87.6%) by a large margin. Without any labels, ContraCluster can achieve a 90.8% accuracy that is comparable to 95.8% by the best supervised counterpart.Comment: Accepted at ICPR 202

    Immersion Microlithography at 193 nm with a Talbot Prism Interferometer

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    A Talbot interference immersion lithography system that uses a compact prism is presented. The use of a compact prism allows the formation of a fluid layer between the optics and the image plane, enhancing the resolution. The reduced dimensions of the system alleviate coherence requirements placed on the source, allowing the use of a compact ArF excimer laser. Photoresist patterns with a half-pitch of 45 nm were formed at an effective NA of 1.05. In addition, a variable-NA immersion interference system was used to achieve an effective NA of 1.25. The smallest half-pitch of the photoresist pattern produced with this system was 38 nm

    Laminar Free Convection from a Vertically-Oriented Concentrated Photovoltaic Cell with Uniform Surface Heat Flux

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    This research project uses field measurements to investigate the cooling of a triple-junction, photovoltaic cell under natural convection when subjected to various amounts of insolation. The team built an experimental apparatus consisting of a mirror and Fresnel lens to concentrate light onto a triple-junction photovoltaic cell, mounted vertically on a copper heat sink. Measurements were taken year-round to provide a wide range of ambient conditions. A surface was then generated, in MATLAB, using Sparrow’s model for natural convection on a vertical plate under constant heat flux. This surface can be used to find the expected operating temperature of a cell at any location, given the ambient temperature and insolation. This research is an important contribution to the industry because it utilizes field data that represents how a cell would react under normal operation. It also extends the use of a well-known model from a one-sun environment to a multi-sun one

    Gene Flow between the Korean Peninsula and Its Neighboring Countries

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    SNP markers provide the primary data for population structure analysis. In this study, we employed whole-genome autosomal SNPs as a marker set (54,836 SNP markers) and tested their possible effects on genetic ancestry using 320 subjects covering 24 regional groups including Northern ( = 16) and Southern ( = 3) Asians, Amerindians ( = 1), and four HapMap populations (YRI, CEU, JPT, and CHB). Additionally, we evaluated the effectiveness and robustness of 50K autosomal SNPs with various clustering methods, along with their dependencies on recombination hotspots (RH), linkage disequilibrium (LD), missing calls and regional specific markers. The RH- and LD-free multi-dimensional scaling (MDS) method showed a broad picture of human migration from Africa to North-East Asia on our genome map, supporting results from previous haploid DNA studies. Of the Asian groups, the East Asian group showed greater differentiation than the Northern and Southern Asian groups with respect to Fst statistics. By extension, the analysis of monomorphic markers implied that nine out of ten historical regions in South Korea, and Tokyo in Japan, showed signs of genetic drift caused by the later settlement of East Asia (South Korea, Japan and China), while Gyeongju in South East Korea showed signs of the earliest settlement in East Asia. In the genome map, the gene flow to the Korean Peninsula from its neighboring countries indicated that some genetic signals from Northern populations such as the Siberians and Mongolians still remain in the South East and West regions, while few signals remain from the early Southern lineages

    Comparative yield loss estimates due to blast in some upland rice cultivars.

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    Leaf and panicle blast severities and grain yield of some upland rice cultivars were measured in three successive years in field plots unprotected or protected with fungicides. The variation in disease severities in different plots was used to establish relationships between severity of leaf and panicle blast and yield. Linear multiple regression equations for each cultivar by year were developed to estimate the yield decrease in different cultivars per unit increase in disease. Leaf blast severities at maximum tillering or booting stage and panicle blast 25 days after heading accounted for variation in grain yield in most of the cultivars. General equations combining five early and eight medium-duration rice cultivars were developed. The estimated percentage losses in grain yield due to blastwere 2.7 and 1.5 for one percent increase in blast in the early and medium-duration cultivars, respectively
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