Growth of quantum three-dimensional structure of InGaAs emitting at ~1 µm applicable for a broadband near-infrared light source

We obtained a high-intensity and broadband emission centered at ~1 µm from InGaAs quantum three-dimensional (3D) structures grown on a GaAs substrate using molecular beam epitaxy. An InGaAs thin layer grown on GaAs with a thickness close to the critical layer thickness is normally affected by strain as a result of the lattice mismatch and introduced misfit dislocations. However, under certain growth conditions for the In concentration and growth temperature, the growth mode of the InGaAs layer can be transformed from two-dimensional to 3D growth. We found the optimal conditions to obtain a broadband emission from 3D structures with a high intensity and controlled center wavelength at ~1 µm. This method offers an alternative approach for fabricating a broadband near-infrared light source for telecommunication and medical imaging systems such as for optical coherence tomography

Growth of quantum three-dimensional structure of InGaAs emitting at ~1 µm applicable for a broadband near-infrared light source

We obtained a high-intensity and broadband emission centered at ~1 µm from InGaAs quantum three-dimensional (3D) structures grown on a GaAs substrate using molecular beam epitaxy. An InGaAs thin layer grown on GaAs with a thickness close to the critical layer thickness is normally affected by strain as a result of the lattice mismatch and introduced misfit dislocations. However, under certain growth conditions for the In concentration and growth temperature, the growth mode of the InGaAs layer can be transformed from two-dimensional to 3D growth. We found the optimal conditions to obtain a broadband emission from 3D structures with a high intensity and controlled center wavelength at ~1 µm. This method offers an alternative approach for fabricating a broadband near-infrared light source for telecommunication and medical imaging systems such as for optical coherence tomography

Ion exchange in glass using femtosecond laser irradiation

We explain the occurrence of ion exchange and an index profile around the focal point inside a commercial crown glass formed by femtosecond laser irradiation. The index profile in the photoinduced area has a ring-shaped pattern, which indicates that local densification occurred in the glass. An irregular surface reflecting the density distribution is formed around the focal point by dry etching process using a focused ion beam. By the irradiation of femtosecond laser pulses, the effect of ion exchange between the focal point and the surrounding area is also observed in the area in which local densification occurred

Luminescence of black silicon fabricated by high-repetition rate femtosecond laser pulses

We studied the photoluminescence (PL) from black silicon that was fabricated using an 800 nm, 250 kHz femtosecond laser in air. By changing the scan velocity and the fluence of the femtosecond laser, the formation of the PL band between the orange (600 nm) and red bands (near 680 nm) could be controlled. The red band PL from the photoinduced microstructures on the black silicon was observed even without annealing due to the thermal accumulation of high-repetition rate femtosecond laser pulses. The orange band PL was easily quenched under 532 nm cw laser irradiation, whereas the red band PL was more stable; this can be attributed to "defect luminescence" and "quantum confinement", respectively

Morphology change from nanocrack into periodic pore array formed by femtosecond laser pulses

Defects inside single crystals are an important concern because they directly affect the physical or chemical properties of the material, especially in sapphire used as substrates for semiconductors. We have investigated the thermally activated transformations of nanometer-scale cracks and phase transitions inside sapphire by femtosecond laser irradiation and successive heat treatments. The nanocracks transformed into periodic arrays of pores and dislocations that aligned along the {1Ī02} planes after heat treatments above 1300 °C. The amorphous phase at the focal point recovered into the initial single crystalline phase after the heat treatments. Our study provides useful information on the recovery behavior of nanometer-scale defects in a single crystal