Peculiarities of Swift Proton Transmission through Tapered Glass Capillaries

A study of the 150-300 keV proton beam transmission through glass (borosilicate) tapered capillaries with different diameters of the input and output of the capillary was performed. The focusing effect was observed. The areal density of the transmitted beam is enhanced by approximately 20 times. It was shown that changing a taper angle from 0.5 deg to 1.7 deg evidences the increase of the transmission coefficient more than by 300 times keeping the initial energy spectrum of ions

Change in structural properties of thin crystals of Si under electron irradiation

The action of electron irradiation on the structural properties of silicon was studied

КОМПЛЕКС ДЛЯ ЭЛЕМЕНТНОГО АНАЛИЗА ПРИПОВЕРХНОСТНЫХ СЛОЕВ ТВЕРДОТЕЛЬНЫХ МАТЕРИАЛОВ С НАНОМЕТРОВЫМ РАЗРЕШЕНИЕМ ПО ГЛУБИНЕ

A measuring complex for quantitative analysis of element contents and distributions of doping atoms in subsurface layers of crystals as well as in thin films by means of the registration of energy spectra of ions scattered to angles higher than π/2 has been designed and fabricated. The complex construction is based on a module-bloc principle. This complex includes microcontrollers which enables us to shorten elemental base of these devices. The measured energy resolution amounts to 1,3 %, energy width of one channel amounts to 281 eV, a range of registered energies amounts 37 to 281 keV, and method sensitivity amounts to 5x1014 at/cm2 .Разработан и изготовлен измерительный комплекс, предназначенный для количественного анализа содержания и распределения по глубине примесных атомов в приповерхностных слоях кристаллов и тонких пленок методом регистрации энергетических спектров ионов, испытавших резерфордовское рассеяние на углы более π/2. В основу конструкции комплекса заложен модульно-блочный принцип. В состав модулей включены микроконтроллеры, что позволило существенно сократить элементную базу этих устройств. Проведена калибровка комплекса. Определены: энергетическое разрешение, составляющее 1,3 %, энергетическая ширина канала – 281 эВ, диапазон регистрируемых энергий от 37 до 281 кэВ, чувствительность 5×1014 ат/см2

СПЕКТРОМЕТР ХАРАКТЕРИСТИЧЕСКОГО РЕНТГЕНОВСКОГО ИЗЛУЧЕНИЯ С ИОННЫМ ВОЗБУЖДЕНИЕМ

An ion excitation characteristic X-ray spectrometer was created on the basis of an ion electrostatic accelerator AN-2500. The energy resolution of the spectrometer measured on the 5.9 keV line of the 55Fe spectrometric source is about of 151 eV. The characteristic X-ray spectra of the bony tissue section, which were affected to coxarthrosis, were measured. It is shown that the intensity of P and Ca spectral lines in the sick tissue is reduced by 20 and 30 %, respectively. Meanwhile, the amount of chlorine increases almost five times, which indicates the accumulation of salts in the sick tissue.На базе электростатического ускорителя ионов AN–2500 создан спектрометр характеристического рентгеновского излучения (ХРИ) с ионным возбуждением. Измеренное по линии 5,9 кэВ спектрометрического источника 55Fe энергетическое разрешение спектрометра составляет 151 эВ. Проведены измерения энергетических спектров ХРИ срезов костных тканей, взятых у прооперированных по поводу замены тазобедренного сустава больных коксартрозом. Показано, что интенсивность линий фосфора и кальция у больной ткани уменьшается на 20 и 30 % соответственно. В то же время существенно, почти в пять раз, возрастает количество хлора, что свидетельствует о наличии солевых отложений в больной ткани

КОМПЛЕКС ДЛЯ ЛОКАЛЬНОЙ ИОННОЙ ИМПЛАНТАЦИИ И ЭЛЕМЕНТНОГО МИКРОАНАЛИЗА С ВЫВОДОМ ИОННОГО ПУЧКА В АТМОСФЕРУ

A measuring system for local elemental analysis is constructed on the basis of an ion accelerator AN-2500. It comprises a device of an in-air ion beam extraction through a tapered glass capillary and a PIXE spectrometer. The angular dependence of the proton beam possessing the transmission energy of 150-250 keV through the tapered capillary with the output diameters of 5 and 10μm is determined. The transit of protons through the capillary is found to be in threshold character and to be determined by the charging rate of its internal surface. The characteristics of current and energy of the ion beam extracted into the atmosphere are analyzed. It is found that the value of output current can be varied from 0.5 to 3 nA, while the ion energy is almost equal to the initial beam energy. The PIXE energy spectra of various materials are measured at the atmospheric pressure. It is found that the output beam intensity is enough for an accurate determination of the elemental composition of the samples under analysis.На базе ионного ускорителя -2500 изготовлен и апробирован измерительный комплекс для локального элементного анализа, состоящий из устройства вывода ионного пучка в атмосферу на основе конического стеклянного капилляра и спектрометра характеристического рентгеновского излучения (ХРИ). Измерены угловые зависимости коэффициента пропускания протонного пучка с энергией 150–250 кэВ через конусообразные капилляры с выходными диаметрами 5 и 10 мкм. Показано, что прохождение протонов через капилляр носит пороговый характер и определяется степенью зарядки его внутренней поверхности. Исследованы токовые и энергетические характеристики ионного пучка, выведенного в атмосферу. Показано, что величина выходного тока может изменяться от 0,5 до 3 нА и энергия ионов практически равна энергии исходного пучка. Измерены энергетические спектры ХРИ при атмосферном давлении от различных материалов, включая и костную ткань. Показано, что интенсивности выходного пучка достаточно для достоверного определения элементного состава исследуемых образцов

Formation of buried high-resitant layers in silicon by two-step substoichiometric implantation of nitrogen IONS

The implantation of nitrogen at an elevated temperature with a dose of (2,5-4)T016 ions/cm2 at 200 keV and higher energies was carried out. The elevated temperature of the substrate results in reduction of damage in the top surface layer and prevention of it from contamination due to hydrocarbons and atomic recoil processes. Then the implantation at room temperature with was carried out. The elevated temperature of the substrate results in reduction of damage in the top surface layer and prevention of it from contamination due to hydrocarbons and atomic recoil processes. Then the implantation at room temperature with dose necessary for the formation of buried amorphous layers was also carried out. The temperature of subsequent annealing was below the threshold at which complete crystallization of the amorphous layers is possible. By means of N 2 * ions implantation at an energy of 200 keV and higher with subsequent annealing at 900°C buried amorphous layers with resistance up to * ions implantation at an energy of 200 keV and higher with subsequent annealing at 900°C buried amorphous layers with resistance up to 106 Q cm were formed

Formation of buried high-resitant layers in silicon by two-step substoichiometric implantation of nitrogen IONS

The implantation of nitrogen at an elevated temperature with a dose of (2,5-4)T016 ions/cm2 at 200 keV and higher energies was carried out. The elevated temperature of the substrate results in reduction of damage in the top surface layer and prevention of it from contamination due to hydrocarbons and atomic recoil processes. Then the implantation at room temperature with was carried out. The elevated temperature of the substrate results in reduction of damage in the top surface layer and prevention of it from contamination due to hydrocarbons and atomic recoil processes. Then the implantation at room temperature with dose necessary for the formation of buried amorphous layers was also carried out. The temperature of subsequent annealing was below the threshold at which complete crystallization of the amorphous layers is possible. By means of N 2 * ions implantation at an energy of 200 keV and higher with subsequent annealing at 900°C buried amorphous layers with resistance up to * ions implantation at an energy of 200 keV and higher with subsequent annealing at 900°C buried amorphous layers with resistance up to 106 Q cm were formed

COMPLEX FOR ELEMENTAL ANALYSIS OF SUBSURFACE LAYERS WITH NANOMETER DEPTH RESOLUTION

A measuring complex for quantitative analysis of element contents and distributions of doping atoms in subsurface layers of crystals as well as in thin films by means of the registration of energy spectra of ions scattered to angles higher than π/2 has been designed and fabricated. The complex construction is based on a module-bloc principle. This complex includes microcontrollers which enables us to shorten elemental base of these devices. The measured energy resolution amounts to 1,3 %, energy width of one channel amounts to 281 eV, a range of registered energies amounts 37 to 281 keV, and method sensitivity amounts to 5x1014 at/cm2