6 research outputs found
Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon
We present a gate-voltage tunable transmon qubit (gatemon) based on planar
InAs nanowires that are selectively grown on a high resistivity silicon
substrate using III-V buffer layers. We show that low loss superconducting
resonators with an internal quality of can readily be realized
using these substrates after the removal of buffer layers. We demonstrate
coherent control and readout of a gatemon device with a relaxation time,
, and dephasing times, and .
Further, we infer a high junction transparency of from an analysis
of the qubit anharmonicity