Influence of the RF magnetron sputtering power on the optical and electrical properties of AZO films

Thin AZO films were synthesized using radio frequency magnetron sputtering method on the surface of polished silicon samples and glass slides. The sputtering power was varied in the range of 150–300 W with the step of 25W; deposition time was adjusted so that the film thickness remained equal to 70 nm. The rest of the deposition parameters: working pressure, temperature, and the substrate rotation rate, remained unchanged. The thickness and deposition rate of thin films were measured using X-ray reflectometry. The electrical properties (resistivity, Hall mobility and charge concentration) of thin films were measured by the Van Der Pauw method using the Hall effect. The transmission spectra of the films were measured in the wavelength range from 300 to 1100 nm. The average crystallite size was determined using X-ray diffraction spectra and the Scherrer equation. As a result, it was shown that AZO films synthesized at a power of 300 W have the best electrical and optical properties. At this power, the lowest resistivity value of 2.83×10-3 Ω∙cm and the maximum charge mobility of 9.6 cm2V-1sec-1 were achieved for films of the same thickness 70 nm. The decrease in the electrical resistivity of the films with increasing power is explained by more intense heating of the substrate during deposition, which leads to an improvement in the crystallinity of the film, and, as a consequence, to an increase in the mobility of charge carriers

Epitaxial Silicon Carbide Films Grown by New Method of Replacement of Atoms on the Surface of High-resistivity (111) Oriented Silicon

The nanolayers of single crystal SiC were grown on the surface of a high-resistance n-type silicon substrates by replacement of the atoms in the crystal lattice of silicon on the carbon atoms at the temperatures of 1250, 1330 °C and CO gas pressures 264, 395 Pa, respectively. The formation of crystalline β-SiC phase in films by electron diffraction and Raman spectroscopy techniques was shown. The SiC films are epitaxial and do not contain twins on the surface. By Atomic Force Microscopy is shown that two set of SiC films have pyramidal and step-like structure of the surface with clear-cut fragmentation of grains with sizes between 100 and 200 nm, and this is due to the composition of carbon and silicon atoms in the layer. Two set of SiC films have a granular surface structure with indistinct grain fragmentation. The influence of synthesis condition on the microstructure of film surface is discussed

Epitaxial Silicon Carbide Films Grown by New Method of Replacement of Atoms on the Surface of High-resistivity (111) Oriented Silicon

The nanolayers of single crystal SiC were grown on the surface of a high-resistance n-type silicon substrates by replacement of the atoms in the crystal lattice of silicon on the carbon atoms at the temperatures of 1250, 1330 °C and CO gas pressures 264, 395 Pa, respectively. The formation of crystalline β-SiC phase in films by electron diffraction and Raman spectroscopy techniques was shown. The SiC films are epitaxial and do not contain twins on the surface. By Atomic Force Microscopy is shown that two set of SiC films have pyramidal and step-like structure of the surface with clear-cut fragmentation of grains with sizes between 100 and 200 nm, and this is due to the composition of carbon and silicon atoms in the layer. Two set of SiC films have a granular surface structure with indistinct grain fragmentation. The influence of synthesis condition on the microstructure of film surface is discussed