Chip-based microcavities coupled to NV centers in single crystal diamond

Optical coupling of nitrogen vacancy centers in single-crystal diamond to an on-chip microcavity is demonstrated. The microcavity is fabricated from a hybrid gallium phosphide and diamond material system, and supports whispering gallery mode resonances with spectrometer resolution limited Q > 25000

Nanocavity enhanced diamond nitrogen-vacancy center zero phonon line emission

Resonantly enhanced emission of the zero phonon line of a diamond nitrogen-vacancy center in single crystal diamond is demonstrated experimentally using a hybrid whispering gallery mode nanocavity

Ultrafast optical spin echo for electron spins in semiconductors

Spin-based quantum computing and magnetic resonance techniques rely on the ability to measure the coherence time, T2, of a spin system. We report on the experimental implementation of all-optical spin echo to determine the T2 time of a semiconductor electron-spin system. We use three ultrafast optical pulses to rotate spins an arbitrary angle and measure an echo signal as the time between pulses is lengthened. Unlike previous spin-echo techniques using microwaves, ultrafast optical pulses allow clean T2 measurements of systems with dephasing times T2* fast in comparison to the timescale for microwave control. This demonstration provides a step toward ultrafast optical dynamic decoupling of spin-based qubits.Comment: 4 pages, 3 figure

Optical Visualization of Radiative Recombination at Partial Dislocations in GaAs

Individual dislocations in an ultra-pure GaAs epilayer are investigated with spatially and spectrally resolved photoluminescence imaging at 5~K. We find that some dislocations act as strong non-radiative recombination centers, while others are efficient radiative recombination centers. We characterize luminescence bands in GaAs due to dislocations, stacking faults, and pairs of stacking faults. These results indicate that low-temperature, spatially-resolved photoluminescence imaging can be a powerful tool for identifying luminescence bands of extended defects. This mapping could then be used to identify extended defects in other GaAs samples solely based on low-temperature photoluminescence spectra.Comment: 4 pages, 4 figure

Towards Integrated Optical Quantum Networks in Diamond

We demonstrate coupling between the zero phonon line (ZPL) of nitrogen-vacancy centers in diamond and the modes of optical micro-resonators fabricated in single crystal diamond membranes sitting on a silicon dioxide substrate. A more than ten-fold enhancement of the ZPL is estimated by measuring the modification of the spontaneous emission lifetime. The cavity-coupled ZPL emission was further coupled into on-chip waveguides thus demonstrating the potential to build optical quantum networks in this diamond on insulator platform

Quantum computers based on electron spins controlled by ultra-fast, off-resonant, single optical pulses

We describe a fast quantum computer based on optically controlled electron spins in charged quantum dots that are coupled to microcavities. This scheme uses broad-band optical pulses to rotate electron spins and provide the clock signal to the system. Non-local two-qubit gates are performed by phase shifts induced by electron spins on laser pulses propagating along a shared waveguide. Numerical simulations of this scheme demonstrate high-fidelity single-qubit and two-qubit gates with operation times comparable to the inverse Zeeman frequency.Comment: 4 pages, 4 figures, introduction is clarified, the section on two-qubit gates was expanded and much more detail about gate fidelities is given, figures were modified, one figure replaced with a figure showing gate fidelities for relevant parameter

Millisecond spin-flip times of donor-bound electrons in GaAs

We observe millisecond spin-flip relaxation times of donor-bound electrons in high-purity n-GaAs . This is three orders of magnitude larger than previously reported lifetimes in n-GaAs . Spin-flip times are measured as a function of magnetic field and exhibit a strong power-law dependence for fields greater than 4 T . This result is in qualitative agreement with previously reported theory and measurements of electrons in quantum dots.Comment: 4 pages, 4 figure

Coherent Population Trapping of Electron Spins in a Semiconductor

In high-purity n-type GaAs under strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence indicating the creation of the coherent population-trapped state. Our data are consistent with a steady-state three-level density-matrix model. The observation of coherent population trapping in GaAs indicates that this and similar semiconductor systems could be used for various EIT-type experiments.Comment: 5 pages, 4 figures replaced 6/25/2007 with PRL versio