76 research outputs found
Interlayer Exchange Coupling in (Ga,Mn)As-based Superlattices
The interlayer coupling between (Ga,Mn)As ferromagnetic layers in
all-semiconductor superlattices is studied theoretically within a tight-binding
model, which takes into account the crystal, band and magnetic structure of the
constituent superlattice components. It is shown that the mechanism originally
introduced to describe the spin correlations in antiferromagnetic EuTe/PbTe
superlattices, explains the experimental results observed in ferromagnetic
semiconductor structures, i.e., both the antiferromagnetic coupling between
ferromagnetic layers in IV-VI (EuS/PbS and EuS/YbSe) superlattices as well as
the ferromagnetic interlayer coupling in III-V ((Ga,Mn)As/GaAs) multilayer
structures. The model allows also to predict (Ga,Mn)As-based structures, in
which an antiferromagnetic interlayer coupling could be expected.Comment: 4 pages, 3 figure
Spin-dependent tunneling in modulated structures of (Ga,Mn)As
A model of coherent tunneling, which combines multi-orbital tight-binding
approximation with Landauer-B\"uttiker formalism, is developed and applied to
all-semiconductor heterostructures containing (Ga,Mn)As ferromagnetic layers. A
comparison of theoretical predictions and experimental results on
spin-dependent Zener tunneling, tunneling magnetoresistance (TMR), and
anisotropic magnetoresistance (TAMR) is presented. The dependence of spin
current on carrier density, magnetization orientation, strain, voltage bias,
and spacer thickness is examined theoretically in order to optimize device
design and performance.Comment: 9 pages, 13 figures, submitted to PR
KINETIC EXCHANGE IN DILUTED MAGNETIC SEMICONDUCTORS OF WURTZITE STRUCTURE*
Kinetic exchange between valence electrons and paramagnetic ions in diluted magnetic semiconductors of wurtzite structure is examined and compared with the results obtained previously for zinc-blende type diluted magnetic semiconductors. Two limiting electron configurations of the impurity ion, d5 and dl , are discussed. For the former, it is shown that the exchange constant anisotropy, experimentally observed in CdMnSe, results from the anisotropy of the hybridization matrix elements. In the latter case, apart from the similar anisotropy of the ferromagnetic exchange constant, additional, antiferromagnetic corrections should be expected, since for this particular symmetry the hybridization between the ground state of the ion and valence band becomes allowed
Voltage controlled spin injection in a (Ga,Mn)As/(Al,Ga)As Zener diode
The spin polarization of the electron current in a
p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a
light-emitting diode, has been studied theoretically. A series of
self-consistent simulations determines the charge distribution, the band
bending, and the current-voltage characteristics for the entire structure. An
empirical tight-binding model, together with the Landauer- Buttiker theory of
coherent transport has been developed to study the current spin polarization.
This dual approach allows to explain the experimentally observed high magnitude
and strong bias dependence of the current spin polarization.Comment: Submitted to Phys. Rev. B Rapid Communication
Spin interactions of interstitial Mn ions in ferromagnetic GaMnAs
The recently reported Rutherford backscattering and particle-induced X-ray
emission experiments have revealed that in low-temperature MBE grown GaMnAs a
significant part of the incorporated Mn atoms occupies tetrahedral interstitial
sites in the lattice. Here we study the magnetic properties of these
interstitial ions. We show that they do not participate in the hole-induced
ferromagnetism. Moreover, Mn interstitial double donors may form pairs with the
nearest substitutional Mn acceptors - our calculations evidence that the spins
in such pairs are antiferromagnetically coupled by the superexchange. We also
show that for the Mn ion in the other, hexagonal, interstitial position (which
seems to be the case in the GaMnBeAs samples) the p-d interactions with the
holes, responsible for the ferromagnetism, are very much suppressed.Comment: 4 pages, 3 figures, submitted to PR
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