Fingerprinting dark energy

Dark energy perturbations are normally either neglected or else included in a purely numerical way, obscuring their dependence on underlying parameters like the equation of state or the sound speed. However, while many different explanations for the dark energy can have the same equation of state, they usually differ in their perturbations so that these provide a fingerprint for distinguishing between different models with the same equation of state. In this paper we derive simple yet accurate approximations that are able to characterize a specific class of models (encompassing most scalar-field models) which is often generically called "dark energy". We then use the approximate solutions to look at the impact of the dark energy perturbations on the dark matter power spectrum and on the integrated Sachs-Wolfe effect in the cosmic microwave background radiation.Comment: 11 pages, 5 figures, minor changes to match published versio

Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance

Vertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations. This paper investigates the effect of the asymmetric source and drain geometries of surround-gate vertical MOSFETs on the drain leakage currents in the OFF-state region of operation. Measurements of gate-induced drain leakage (GIDL) and body leakage are carried out as a function of temperature for transistors connected in the drain-on-top and drain-on-bottom configurations. Asymmetric leakage currents are seen when the source and drain terminals are interchanged, with the GIDL being higher in the drain-on-bottom configuration and the body leakage being higher in the drain-on-top configuration. Band-to-band tunneling is identified as the dominant leakage mechanism for both the GIDL and body leakage from electrical measurements at temperatures ranging from ?50 to 200?C. The asymmetric body leakage is explained by a difference in body doping concentration at the top and bottom drain–body junctions due to the use of a p-well ion implantation. The asymmetric GIDL is explained by the difference in gate oxide thickness on the vertical (110) pillar sidewalls and the horizontal (100) wafer surface

Transition from Poisson to gaussian unitary statistics: The two-point correlation function

We consider the Rosenzweig-Porter model of random matrix which interpolates between Poisson and gaussian unitary statistics and compute exactly the two-point correlation function. Asymptotic formulas for this function are given near the Poisson and gaussian limit.Comment: 19 pages, no figure

Level Crossing Along Sphaleron Barriers

In the electroweak sector of the standard model topologically inequivalent vacua are separated by finite energy barriers, whose height is given by the sphale\-ron. For large values of the Higgs mass there exist several sphaleron solutions and the barriers are no longer symmetric. We construct paths of classical configurations from one vacuum to a neighbouring one and solve the fermion equations in the background field configurations along such paths, choosing the fermions of a doublet degenerate in mass. As in the case of light Higgs masses we observe the level crossing phenomenon also for large Higgs masses.Comment: 17 pages, latex, 10 figures in uuencoded postscript files. THU-94/0

The Sphaleron Barrier in the Presence of Fermions

We calculate the minimal energy path over the sphaleron barrier in the pre\-sen\-ce of fermions, assuming that the fermions of a doublet are degenerate in mass. This allows for spherically symmetric ans\"atze for the fields, when the mixing angle dependence is neglected. While light fermions have little influence on the barrier, the presence of heavy fermions ($M_F \sim$ TeV) strongly deforms the barrier, giving rise to additional sphalerons for very heavy fermions ($M_F \sim$ 10 TeV). Heavy fermions form non-topological solitons in the vacuum sector.Comment: 19 pages, latex, 18 figures in 3 seperate uuencoded postscript files THU-93/1

Nondegenerate Fermions in the Background of the Sphaleron Barrier

We consider level crossing in the background of the sphaleron barrier for nondegenerate fermions. The mass splitting within the fermion doublets allows only for an axially symmetric ansatz for the fermion fields. In the background of the sphaleron we solve the partial differential equations for the fermion functions. We find little angular dependence for our choice of ansatz. We therefore propose a good approximate ansatz with radial functions only. We generalize this approximate ansatz with radial functions only to fermions in the background of the sphaleron barrier and argue, that it is a good approximation there, too.Comment: LATEX, 20 pages, 11 figure

Dark-bright mixing of interband transitions in symmetric semiconductor quantum dots

In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum dots in longitudinal magnetic fields applied along the growth axis we observe in addition to the expected bright states also nominally dark transitions for both charged and neutral excitons. We uncover a strongly non-monotonous, sign changing field dependence of the bright neutral exciton splitting resulting from the interplay between exchange and Zeeman effects. Our theory shows quantitatively that these surprising experimental results are due to magnetic-field-induced \pm 3/2 heavy-hole mixing, an inherent property of systems with C_3v point-group symmetry.Comment: 5 pages, 3 figure