Properties of zirconia thin films prepared by reactive magnetron sputtering

The search for alternative dielectric materials with high dielectric constant, thermodynamic stable on silicon substrate and low direct tunneling current leads to oxide based materials like zirconia. Zirconia thin films were prepared by reactive magnetron sputtering. The capacitance voltage, ac and dc electrical characteristics were investigated and the values like fixed oxide charges were calculated and compared among the samples with and without annealing. Films annealed at $700^oC$ showed a dielectric constant \sim26 with interface trap densities of $1.629\times1012 eV^{-1} cm^{-2}$

Structural and surface features of multiwall carbon nanotube

We present the direct evidence of defective and disorder places on the surface of multiwall carbon nanotube (MWCNT), visualizing the presence of amorphous carbon at those sites. These defective surfaces being higher in energy are the key features of functionalization with different materials. The interaction of the pi orbital electrons of different carbon atoms of adjacent layers is more at the bent portion, than that of regular portion of the CNT. Hence the tubular structure of the bent portion of nanotubes is spaced more than that of regular portion of the nanotubes, minimizing the stress. (C) 2011 Elsevier B.V. All rights reserved

Studies on CNTs/DNA composite

The electrical and optical properties of MWCNTs/DNA composite were studied. Electrical conductivity studies reveal that, the increase in CNTs concentration in DNA increases the conductivity. Fourier transformed Infrared (FTIR) spectrum shows that the CNTs are bonded to DNA covalently at the ends and defects sites and the wrapping of DNA on the CNTs is due to van der Waals force

Microstructural evolution of tungsten oxide thin films

Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, thin films annealed above 400 degrees C were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a ``instability wheel'' model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation

Electrical and structural properties of zirconia thin films prepared by reactive magnetron sputtering

Thin films of ZrO2 were prepared by reactive magnetron sputtering. Annealing of the films exhibited a drastic change in the properties due to improved crystallinity and packing density. The root mean square roughness of the sample observed from atomic force microscope is about 5.75 nm which is comparable to the average grain size of the thin film which is about 6 nm obtained from X-ray diffraction. The film annealed at 873 K exhibits an optical band gap of around 4.83 eV and shows +4 oxidation state of zirconium indicating fully oxidized zirconium, whereas higher annealing temperatures lead to oxygen deficiency in the films and this is reflected in their properties. A discontinuity in the imaginary part of the AC conductivity was observed in the frequency range of tens of thousands of Hz, where as, the real part does not show such behavior

Enhanced dielectric response of ZrO2 upon Ti doping and introduction of O vacancies

We determine the electronic properties and dielectric response of zirconia (ZrO2) with oxygen vacancies (O vacancies) and Ti doping using first-principles density functional theory calculations based on pseudopotentials and a plane wave basis. We find significantly enhanced static dielectric response in zirconia with Ti doping and introduction of oxygen vacancies. Softening of phonon modes are responsible for the enhanced dielectric response of doped samples compared to pure zirconia

Effects of O vacancies and C doping on dielectric properties of ZrO2: A first-principles study

The authors determine electronic properties, structural stability, and dielectric response of zirconia $(ZrO_2)$ with oxygen vacancies (O vacancies) and carbon doping (C doping) using first-principles density functional theory calculations based on pseudopotentials and a plane wave basis. They find significantly enhanced static dielectric response in zirconia with oxygen vacancies arising from a softened phonon mode. They also find that effects of carbon doping on the dielectric response are anisotropic