4 research outputs found
Ge quantum dot arrays grown by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface: nucleation, morphology and CMOS compatibility
Issues of morphology, nucleation and growth of Ge cluster arrays deposited by
ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered.
Difference in nucleation of quantum dots during Ge deposition at low (<600 deg
C) and high (>600 deg. C) temperatures is studied by high resolution scanning
tunneling microscopy. The atomic models of growth of both species of Ge
huts---pyramids and wedges---are proposed. The growth cycle of Ge QD arrays at
low temperatures is explored. A problem of lowering of the array formation
temperature is discussed with the focus on CMOS compatibility of the entire
process; a special attention is paid upon approaches to reduction of treatment
temperature during the Si(001) surface pre-growth cleaning, which is at once a
key and the highest-temperature phase of the Ge/Si(001) quantum dot dense array
formation process. The temperature of the Si clean surface preparation, the
final high-temperature step of which is, as a rule, carried out directly in the
MBE chamber just before the structure deposition, determines the compatibility
of formation process of Ge-QD-array based devices with the CMOS manufacturing
cycle. Silicon surface hydrogenation at the final stage of its wet chemical
etching during the preliminary cleaning is proposed as a possible way of
efficient reduction of the Si wafer pre-growth annealing temperature.Comment: 30 pages, 11 figure
STM and RHEED study of the Si(001)-c(8x8) surface
The Si(001) surface deoxidized by short annealing at T~925C in the ultrahigh
vacuum molecular beam epitaxy chamber has been in situ investigated by high
resolution scanning tunnelling microscopy (STM) and reflected high energy
electron diffraction (RHEED). RHEED patterns corresponding to (2x1) and (4x4)
structures were observed during sample treatment. The (4x4) reconstruction
arose at T<600C after annealing. The reconstruction was observed to be
reversible: the (4x4) structure turned into the (2x1) one at T>600C, the (4x4)
structure appeared again at recurring cooling. The c(8x8) reconstruction was
revealed by STM at room temperature on the same samples. A fraction of the
surface area covered by the c(8x8) structure decreased as the sample cooling
rate was reduced. The (2x1) structure was observed on the surface free of the
c(8x8) one. The c(8x8) structure has been evidenced to manifest itself as the
(4x4) one in the RHEED patterns. A model of the c(8x8) structure formation has
been built on the basis of the STM data. Origin of the high-order structure on
the Si(001) surface and its connection with the epinucleation phenomenon are
discussed.Comment: 26 pages, 12 figure
CMOS-compatible dense arrays of Ge quantum dots on the Si(001) surface: hut cluster nucleation, atomic structure and array life cycle during UHV MBE growth
We report a direct observation of Ge hut nucleation on Si(001) during UHV molecular beam epitaxy at 360°C. Nuclei of pyramids and wedges were observed on the wetting layer (WL) (M × N) patches starting from the coverage of 5.1 Å and found to have different structures. Atomic models of nuclei of both hut species have been built as well as models of the growing clusters. The growth of huts of each species has been demonstrated to follow generic scenarios. The formation of the second atomic layer of a wedge results in rearrangement of its first layer. Its ridge structure does not repeat the nucleus. A pyramid grows without phase transitions. A structure of its vertex copies the nucleus. Transitions between hut species turned out to be impossible. The wedges contain point defects in the upper corners of the triangular faces and have preferential growth directions along the ridges. The derived structure of the {105} facet follows the paired dimer model. Further growth of hut arrays results in domination of wedges, and the density of pyramids exponentially drops. The second generation of huts arises at coverages >10 Å; new huts occupy the whole WL at coverages ~14 Å. Nanocrystalline Ge 2D layer begins forming at coverages >14 Å