6,439 research outputs found

    Enabling III-V-based optoelectronics with low-cost dynamic hydride vapor phase epitaxy

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    Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials have improved performance compared to silicon, but currently they are relegated to applications in high-value or niche markets due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis using hydride vapor phase epitaxy that has the potential to lower III-V semiconductor deposition costs by orders of magnitude while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. We demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market. The emergence of a low-cost III-V deposition technique will enable III-V electronic and opto-electronic devices, with all the benefits that they bring, to permeate throughout modern society.Comment: pre-prin

    Calculation of Resistive Loads for Elastic Resistive Exercises

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    Context: What is the correct resistive load to start resistive training with elastic resistance to gain strength? This question is typically answered by the clinician\u27s best estimate and patient\u27s level of discomfort without objective evidence. Objective: To determine the average level of resistance to initiate a strengthening routine with elastic resistance following isometric strength testing. Design: Cohort. Setting: Clinical. Participants: Thirty-four subjects (31±13yrs, 73±17kg, 170±12cm). Interventions: The force produced was measured in Newtons (N) with an isometric dynamometer. The force distance was the distance from center of joint to location of force applied was measured in meters to calculate torque that was called Test Torque for the purposes of this report. This torque data was converted to Exercise Load in pounds based on the location where the resistance was applied, specifically the distance away from the center of rotation of the exercising limb. The average amount of exercise load as percentage of initial Test Torque for each individual for each exercise was recorded to determine what the average level of resistance that could be used for elastic resistance strengthening program. Main Outcome Measures: The percentage of initial test torque calculated for the exercise was recorded for each exercise and torque produced was normalized to body weight. Results: The average percentage of maximal isometric force that was used to initiate exercises was 30 ± 7% of test torque. Conclusions: This provides clinicians with an objective target load to start elastic resistance training. Individual variations will occur but utilization of a load cell during elastic resistance provides objective documentation of exercise progression

    Direct measurement of B(D_s^+ → φX^+)

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    The absolute inclusive branching fraction of D_s^+→φX^+ has been measured from data collected by the BES detector at a center-of-mass energy of 4.03 GeV, corresponding to an integrated luminosity of 22.3 pb^(-1). At this energy, direct pair production e^+e^-→D_s^+D_s^- has been observed. We have selected D_s candidate events by reconstructing five hadronic decay modes D_s^+→φπ^+, K^(0*)K^+, K^0K^+, f0^(π+) and K^0K^-π^+π^+ and have searched for inclusive φ’s in the recoiling D_s^-. We observed three recoiling φ’s in the 166.4 ± 31.8 D_s candidate events, which leads to the absolute branching fraction B(D_s^+→φX^+)=(17.8(-7.2 -6.3)^(+15.1+0.6)) % and B(D_s-6.3+→φπ-6.3+)=(3.6_(-1.6 -1.3)(^_3.1+0.4) %. [S0556-2821(97)02423-5

    Measurement of the mass of the Ï„ lepton

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    The mass of the τ lepton has been measured at the Beijing Electron-Positron Collider using the Beijing Spectrometer. A search near threshold for e^+e^-→τ^+τ^- was performed. Candidate events were identified by requiring that one τ decay via τ→eνν¯, and the other via τ→μνν¯. The mass value, obtained from a fit to the energy dependence of the τ^+τ^- cross section, is m_τ=1776.9_(-0.5)^(+0.4)±0.2 MeV
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