9 research outputs found
Analytical extraction method for submicron MOS transistor model parameters in the linear region
Temperature Dependency in UDSM Process
International audienceIn low power UDSM process the use of reduced supply voltage with high threshold voltages may reverse the temperature dependence of designs. In this paper we propose a model to define the true worst Process, Voltage and Temperature conditions to be used to verify a design. This model will provide an accurate worst case definition for high performance designs where standard design margins are not applicable. This model is validated at either cell level or path level on two different 130nm process