54 research outputs found
Electroluminescence in silicon oxynitride films
Electroluminescence (EL) was reported from 50 nm silicon oxynitride films on p-type crystalline silicon substrates in a Au/silicon oxynitride/Si structure. The EL intensity is consisted with radiative recombination of injected carriers, and has a peak below 2.45 eV. The EL can only be seen in annealed samples with the emission similar to the photoluminescence from the same samples
Characterization of the luminescence center in photo- and electroluminescent amorphous silicon oxynitride films
We have studied the photoluminescence (PL) mechanism of photo- and electroluminescent amorphous silicon oxynitride films grown by plasma enhanced chemical vapor deposition. The composition of the films was determined by Rutherford backscattering spectrometry and monitored by the index of refraction with single-wavelength ellipsometry. Two sets of samples were grown, each with different reactant gas residence times in the deposition chamber. For samples grown with a residence time of about 5 s, the energy of the PL peak for 2.54 eV excitation is 2.3 eV for stoichiometric films and redshifts with increasing silicon content to 1.7 eV for the most silicon-rich films. The energy of the PL peak for 3.8 eV excitation is 2.8 eV for stoichiometric films and 2.1 eV for the most silicon-rich films. For stoichiometric films, the PL intensity is independent of temperature between 80 and 300 K using 2.54 eV excitation, but the PL intensity decreases by a factor of two over the same temperature range for 3.8 eV excitation. The authors interpret these aspects of the PL as consistent with tail-state recombination. Other results imply the PL is due to a specific luminescence center related to Si-Si or Si-H bonding. A 450°C anneal reduces the paramagnetic defect density in the films, as detected by electron paramagnetic resonance, by an order of magnitude, but does not increase the PL intensity, while a 950°C anneal increases both the defect density and the PL intensity. In addition, films in a second set of samples, grown with a residence time of 1.8 s, display very different PL behavior than samples in the first set with the same composition. Samples near stoichiometry in the second set have a PL peak at 2.06 eV and are 20 times less intense than stoichiometric samples in the first set. Optical absorption measurements indicate both types of samples contain Si-Si bonds, with the second set containing many more Si-Si bonds than the first. Fourier-transform infrared measurements indicate the presence of a Si-H bond that is stable at temperatures of 950°C in the first set, but not in the second set. Thus, the study as a whole suggests a complete picture of luminescence in our silicon oxynitride films must incorporate elements of both tail-state and luminescence center models. The relation of the results to other PL studies in silicon alloys and porous silicon is discussed
Mechanical versus thermodynamical melting in pressure-induced amorphization: the role of defects
We study numerically an atomistic model which is shown to exhibit a one--step
crystal--to--amorphous transition upon decompression. The amorphous phase
cannot be distinguished from the one obtained by quenching from the melt. For a
perfectly crystalline starting sample, the transition occurs at a pressure at
which a shear phonon mode destabilizes, and triggers a cascade process leading
to the amorphous state. When defects are present, the nucleation barrier is
greatly reduced and the transformation occurs very close to the extrapolation
of the melting line to low temperatures. In this last case, the transition is
not anticipated by the softening of any phonon mode. Our observations reconcile
different claims in the literature about the underlying mechanism of pressure
amorphization.Comment: 7 pages, 7 figure
Entangled light in transition through the generation threshold
We investigate continuous variable entangling resources on the base of
two-mode squeezing for all operational regimes of a nondegenerate optical
parametric oscillator with allowance for quantum noise of arbitrary level. The
results for the quadrature variances of a pair of generated modes are obtained
by using the exact steady-state solution of Fokker-Planck equation for the
complex P-quasiprobability distribution function. We find a simple expression
for the squeezed variances in the near-threshold range and conclude that the
maximal two-mode squeezing reaches 50% relative to the level of vacuum
fluctuations and is achieved at the pump field intensity close to the
generation threshold. The distinction between the degree of two-mode squeezing
for monostable and bistable operational regimes is cleared up.Comment: 7 pages, 4 figures; Content changed: more details added to the
discussion. To be published in Phys. Rev.
Effects of χ(3) nonlinearities in second-harmonic generation
We investigate the effects of higher-order, chi ((3)), nonlinearities on the process of second-harmonic generation. In the traveling-wave case we find substantive differences in the macroscopic behavior of the fields when the chi ((3)) components are present. In the intracavity cage, which has been investigated before using a Linearized analysis, we investigate regions where these analyses may not be valid, comparing and contrasting the full quantum simulations with previous results
Verhulst model with Levy white noise excitation
The transient dynamics of the Verhulst model perturbed by arbitrary
non-Gaussian white noise is investigated. Based on the infinitely divisible
distribution of the Levy process we study the nonlinear relaxation of the
population density for three cases of white non-Gaussian noise: (i) shot noise,
(ii) noise with a probability density of increments expressed in terms of Gamma
function, and (iii) Cauchy stable noise. We obtain exact results for the
probability distribution of the population density in all cases, and for Cauchy
stable noise the exact expression of the nonlinear relaxation time is derived.
Moreover starting from an initial delta function distribution, we find a
transition induced by the multiplicative Levy noise, from a trimodal
probability distribution to a bimodal probability distribution in asymptotics.
Finally we find a nonmonotonic behavior of the nonlinear relaxation time as a
function of the Cauchy stable noise intensity.Comment: 9 pages, 12 figures, to appear in EPJ B (2008
CRITICAL DIMENSIONALITY FOR NORMAL FLUCTUATIONS OF MACROVARIABLES IN NONEQUILIBRIUM STATES
この論文は国立情報学研究所の電子図書館事業により電子化されました。By examining the spatial dimensionality dependence of the scaling behaviour of macrovariables and their fluctuations, the condition for normal fluctuations in non-equilibrium systems is examined. It is found that there is a critical dimension; above which the fluctuations are normal and exhibit Gaussian-Markov behaviour, and below which the fluctuations are non-linear non-Gaussian
Dissecting aneurysm of the carotid artery as a cause of respiratory distress in adult cattle
A two-and-a-half-year-old Friesian cow and a five-year-old Charolais cow developed severe respiratory distress and palpable swellings to the left of the larynx as a result of a dissecting aneurysm of the common carotid artery. Neither cow responded to medical treatment. The underlying pathogenesis of the condition was uncertain, but direct trauma to the carotid artery was a possible contributory factor. Aneurysms of the common carotid artery should be considered when swelling occurs in the region of the larynx or when respiratory distress is due to laryngeal compression
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