A 1.2V 10μW NPN-Based Temperature Sensor in 65nm CMOS with an inaccuracy of ±0.2°C (3s) from −70°C to 125°C

This paper describes a temperature sensor realized in a 65nm CMOS process with a batch-calibrated inaccuracy of ±0.5°C (3σ) and a trimmed inaccuracy of ±0.2°C (3σ) from –70°C to 125°C. This represents a 10-fold improvement in accuracy compared to other deep-submicron temperature sensors [1,2], and is comparable with that of state-of-the-art sensors implemented in larger-featuresize processes [3,4]. The sensor draws 8.3μA from a 1.2V supply and occupies an area of 0.1mm2, which is 45 times less than that of sensors with comparable accuracy [3,4]. These advances are enabled by the use of NPN transistors as sensing elements, the use of dynamic techniques i.e. correlated double sampling (CDS) and dynamic element matching (DEM), and a single room-temperature trim

A 2.4GHz 830pJ/bit duty-cycled wake-up receiver with −82dBm sensitivity for crystal-less wireless sensor nodes

A 65 nm CMOS 2.4 GHz wake-up receiver operating with low-accuracy frequency references has been realized. Robustness to frequency inaccuracy is achieved by employing non-coherent energy detection, broadband-IF heterodyne architecture and impulse-radio modulation. The radio dissipates 415 ¿W at 500 kb/s and achieves a sensitivity of -82 dBm with an energy efficiency of 830 pJ/bit.\u

Smart temperature sensors in standard CMOS

A smart temperature sensor is an integrated system consisting of a temperature sensor, its bias circuitry and an analog-to-digital converter (ADC). When manufactured in CMOS technology, such sensors have found widespread use due to their low cost, small size and ease of use. In this paper the basic operating principles of CMOS smart temperature sensors are explained and the stateof-the-art is reviewed. Two new figures of merit for smart temperature sensors are defined, which express the tradeoff between their energy/conversion and their resolution and inaccuracy, respectively. A survey of data published over the last 25 years shows that both these figures of merit usefully bound the performance of state-of-the-art smart temperature sensors.MicroelectronicsElectrical Engineering, Mathematics and Computer Scienc

Flow sensing with thermal sigma-delta modulators

Electronic Instrumentatio

A 6800-μm² Resistor-Based Temperature Sensor in 180-nm CMOS

A resistor-based temperature sensor has been realized in 180 nm CMOS for SoC thermal management applications. Occupying only 6800 μm2, it is the smallest resistor-based temperature sensor ever reported. This is achieved by employing a compact highly-digital VCO-based ADC. After a 2-point trim, the sensor achieves an inaccuracy of ±0.35 °C (3σ) in a temperature range from-35 °C to 125 °C. By achieving a resolution of 0.12 °C (rms) at 2.8kSa/s, it can track the fast thermal-transients in SoCs.Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.Electronic InstrumentationMicroelectronic

A 0.25mm² Resistor-Based Temperature Sensor with an Inaccuracy of 0.12°C (3σ) from -55°C to 125°C and a Resolution FOM of 32fJK²

Temperature sensors based on Wheatstone bridges, e.g. [1,2], have recently achieved higher resolution and greater energy efficiency than conventional BJT-based sensors [3]. However, this comes at the expense of area, making them less attractive in industrial applications. This paper presents a Wheatstone-bridge sensor that uses a zoom-ADC architecture to reduce area (by 3x over [2]) and achieve state-of-the-art energy-efficiency for an integrated temperature sensor. After a 1st-order fit and a systematic non-linearity correction [2,4], it also achieves state-of-the-art inaccuracy: 0.12°C (3σ) over the full military temperature range (-55°C to 125°C).</p

A 6800-μm² Resistor-Based Temperature Sensor in 180-nm CMOS

A resistor-based temperature sensor has been realized in 180 nm CMOS for SoC thermal management applications. Occupying only 6800 μm2, it is the smallest resistor-based temperature sensor ever reported. This is achieved by employing a compact highly-digital VCO-based ADC. After a 2-point trim, the sensor achieves an inaccuracy of ±0.35 °C (3σ) in a temperature range from-35 °C to 125 °C. By achieving a resolution of 0.12 °C (rms) at 2.8kSa/s, it can track the fast thermal-transients in SoCs.</p