Quantum Hall Ferromagnets: Induced Topological term and electromagnetic interactions

The $\nu = 1$ quantum Hall ground state in materials like GaAs is well known to be ferromagnetic in nature. The exchange part of the Coulomb interaction provides the necessary attractive force to align the electron spins spontaneously. The gapless Goldstone modes are the angular deviations of the magnetisation vector from its fixed ground state orientation. Furthermore, the system is known to support electrically charged spin skyrmion configurations. It has been claimed in the literature that these skyrmions are fermionic owing to an induced topological Hopf term in the effective action governing the Goldstone modes. However, objections have been raised against the method by which this term has been obtained from the microscopics of the system. In this article, we use the technique of the derivative expansion to derive, in an unambiguous manner, the effective action of the angular degrees of freedom, including the Hopf term. Furthermore, we have coupled perturbative electromagnetic fields to the microscopic fermionic system in order to study their effect on the spin excitations. We have obtained an elegant expression for the electromagnetic coupling of the angular variables describing these spin excitations.Comment: 23 pages, Plain TeX, no figure

Reentrant Melting of Soliton Lattice Phase in Bilayer Quantum Hall System

At large parallel magnetic field $B_\parallel$, the ground state of bilayer quantum Hall system forms uniform soliton lattice phase. The soliton lattice will melt due to the proliferation of unbound dislocations at certain finite temperature leading to the Kosterlitz-Thouless (KT) melting. We calculate the KT phase boundary by numerically solving the newly developed set of Bethe ansatz equations, which fully take into account the thermal fluctuations of soliton walls. We predict that within certain ranges of $B_\parallel$, the soliton lattice will melt at $T_{\rm KT}$. Interestingly enough, as temperature decreases, it melts at certain temperature lower than $T_{\rm KT}$ exhibiting the reentrant behaviour of the soliton liquid phase.Comment: 11 pages, 2 figure

Bag Formation in Quantum Hall Ferromagnets

Charged skyrmions or spin-textures in the quantum Hall ferromagnet at filling factor nu=1 are reinvestigated using the Hartree-Fock method in the lowest Landau level approximation. It is shown that the single Slater determinant with the minimum energy in the unit charge sector is always of the hedgehog form. It is observed that the magnetization vector's length deviates locally from unity, i.e. a bag is formed which accommodates the excess charge. In terms of a gradient expansion for extended spin-textures a novel O(3) type of effective action is presented, which takes bag formation into account.Comment: 13 pages, 3 figure

Bandwidth-Controlled Insulator-Metal Transition and Correlated Metallic State in 5dd Transition Metal Oxides Srn+1_{n+1}Irn_{n}O3n+1_{3n+1} (nn=1, 2, and ∞\infty)

We investigated the electronic structures of the 5$d$ Ruddlesden-Popper series Sr$_{n+1}$Ir$_{n}$O$_{3n+1}$ ($n$=1, 2, and $\infty$) using optical spectroscopy and first-principles calculations. As 5$d$ orbitals are spatially more extended than 3$d$ or 4$d$ orbitals, it has been widely accepted that correlation effects are minimal in 5$d$ compounds. However, we observed a bandwidth-controlled transition from a Mott insulator to a metal as we increased $n$. In addition, the artificially synthesized perovskite SrIrO$_{3}$ showed a very large mass enhancement of about 6, indicating that it was in a correlated metallic state

Adjacency labeling schemes and induced-universal graphs

We describe a way of assigning labels to the vertices of any undirected graph on up to $n$ vertices, each composed of $n/2+O(1)$ bits, such that given the labels of two vertices, and no other information regarding the graph, it is possible to decide whether or not the vertices are adjacent in the graph. This is optimal, up to an additive constant, and constitutes the first improvement in almost 50 years of an $n/2+O(\log n)$ bound of Moon. As a consequence, we obtain an induced-universal graph for $n$-vertex graphs containing only $O(2^{n/2})$ vertices, which is optimal up to a multiplicative constant, solving an open problem of Vizing from 1968. We obtain similar tight results for directed graphs, tournaments and bipartite graphs

A Micro-Machined Microphone Based on a Combination of Electret and Field-Effect Transistor

Capacitive-type transduction is now widely used in MEMS microphones. However, its sensitivity decreases with reducing size, due to decreasing air gap capacitance. In the present study, we proposed and developed the Electret Gate of Field Effect Transistor (ElGoFET) transduction based on an electret and FET (field-effect-transistor) as a novel mechanism of MEMS microphone transduction. The ElGoFET transduction has the advantage that the sensitivity is dependent on the ratio of capacitance components in the transduction structure. Hence, ElGoFET transduction has high sensitivity even with a smaller air gap capacitance, due to a miniaturization of the transducer. A FET with a floating-gate electrode embedded on a membrane was designed and fabricated and an electret was fabricated by ion implantation with Ga+ ions. During the assembly process between the FET and the electret, the operating point of the FET was characterized using the static response of the FET induced by the electric field due to the trapped positive charge at the electret. Additionally, we evaluated the microphone performance of the ElGoFET by measuring the acoustic response in air using a semi-anechoic room. The results confirmed that the proposed transduction mechanism has potential for microphone applications.open1132Ysciescopu